Oxide Nanopowder

Hafnium oxide nanoparticles are an inorganic compound which is also known as hafnia. Its chemical formula is HfO2. It is the most stable compound and electrically insulator. This compound has the same structure as ZrO2. It forms different crystal structure such as cubic, tetragonal, monoclinic and orthorhombic. It shows remarkable chemical and physical properties so that it is used in distinct fields. This compound has a very high melting point and due to its refractive index, it has applications in protective coatings.

Hafnium oxide nanoparticles can be synthesized by various methods such as solvothermal, microwave, hydrothermal, non-hydrolytic synthesis and precipitation methods Hafnium oxide has also applications in bio-safety. HfO2 nanoparticles are densely packed and it has the ability to absorb the gamma/x-ray radiations, which helps to target in cellular components on tumor tissues for the radiotherapy. It has also physicochemical properties due to its high melting point, high chemical stability, and low optical losses.

The hafnium oxide (HfO2) is a material with a wide range of possible technological applications because of its chemical and physical properties such as high melting point, high chemical stability, and hardness near to diamond in its tetragonal phase. These properties make HfO2 an attractive compound to be used as gas sensors and along with many electronic and optical applications.

Hafnium dioxide (HfO2) is attracting attention for bio-related applications due to its good cytocompatibility, high density, and resistance to corrosion and mechanical damage. Hafnium oxide nps can synthesize two types of hafnium-oxide thin films on substrates via self-organized electrochemical anodization: an array of hierarchically structured nanorods anchored to a thin oxide layer and a microscopically flat oxide film.

Hafnia oxide nanoparticles are used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. The advantage for transistors is it is high dielectric constant: the dielectric constant of HfO2 is 4–6 times higher than that of SiO2. The dielectric constant and other properties depend on the deposition method, composition, and microstructure of the material.