Home » Aluminium Sputtering Target (Al, Purity: 99.99%)

SPUTTERING TARGETS

Stock No. CAS MSDS Specification COA
NS6130-10-1054 7429-90-5 MSDS pdf Specification pdf COA pdf

Aluminium Sputtering Target (Al, Purity: 99.99%)

Aluminium Sputtering Target

Aluminium Sputtering Target (Al, Purity: 99.99%)

Quality Control: Each lot of Aluminium Sputtering Target (Al, Purity: 99.99%) was tested successfully.

Aluminium Sputtering Target (Al, Purity: 99.99%)

Aluminium Sputtering Target (Al, Purity: 99.99%)

 
Product Aluminium Sputtering Target (Al, Purity: 99.99%)
Stock No NS6130-10-1054
CAS 7429-90-5 Confirm
Purity 99.99% Confirm
Density 2.70 g/cm³ Confirm
Molecular Weight 26.98 g/mol Confirm
Melting Point 660.32 °C Confirm
Diameter 50 mm ± 1mm Confirm
Thickness 3 mm ± 0.5mm Confirm
Shape Round Confirm
Size and Shape Targets Diameter and thickness can be according to Customer Requirement
Backing Plate Copper (as per customer requirement)
Conclusion The specifications Confirm with enterprise standard
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.99%

Expert Reviews

Dr. Jochen Maier, Ph.D (Canterbury Christ Church University, New Zealand)

Aluminium Sputtering Target primary market is sputtering targets used to make interconnects for integrated circuits. For some applications the impurities uranium and thorium are reduced to less than 1 ppbw to avoid “soft errors” associated with α particle emission. The crystallization process achieves segregation coefficients which are close to theoretical at normal yields, and this, coupled with the scale of the units, allows practical production of this material. The silicon purification process involves crystallization of Si from molten aluminum alloys containing about 30% silicon.


Dr. Ms. Suvi Ellilä, Ph.D (Halmstad University department of Research & technology, Sweden)

Aluminium Sputtering Target  crystallites from this process are further treated to remove residual Al and an extreme purity ingot is obtained. This material is considered suitable for single crystal or ribbon type photovoltaic cells and for certain IC applications, including highly doped substrates used for epitaxial growth. In production of both extreme purity Al and Si, impurities are rejected to the remaining melt as the crystals form and some separation is achieved by draining this downgraded melt from the unit.


Dr. Patrick Nilssen, (Northern Private University Olivos, Peru)

Aluminium Sputtering Target Crystallographic texture in sputtering targets determines the emission trajectory of the sputtered atoms and significantly influences the film thickness uniformity chracteristics of the sputtering source. The target operating temperature is varied independent of the sputtering system operating power by changing the target cooling conditions. Increasing the amount of cold work in the target prior to sputtering or increasing the target operating temperature increases the propensity for the target to undergo recrystallization.


Aluminium Sputtering target

Aluminium Sputtering target