Home » Antimony Sputtering Target (Sb, Purity: 99.99%)

SPUTTERING TARGETS

Stock No.	CAS	MSDS	Specification	COA
NS6130-10-1030	7440-36-0

Antimony Sputtering Target (Sb, Purity: 99.99%)

Antimony Sputtering Target

Antimony Sputtering Target (Sb, Purity: 99.99%)

Quality Control: Each lot of Antimony Sputtering Target was tested successfully.

Antimony Sputtering Target

Product	Antimony Sputtering Target
Stock No	NS6130-10-1030
CAS	7440-36-0	Confirm
Purity	99.99%	Confirm
Diameter	50 mm ± 1mm	Confirm
Thickness	3 mm ± 0.5mm	Confirm
Shape	Round	Confirm
Size and Shape	Targets Diameter and thickness can be according to Customer Requirement
Backing Plate	Copper (as per customer requirement)
Conclusion	The specifications Confirm with enterprise standard
Main Inspect Verifier	Manager QC

Typical Chemical Analysis

Assay

99.99%

Expert Reviews

Dr. Jochen Maier, Ph.D (Canterbury Christ Church University, New Zealand)

Antimony Sputtering Target is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes. The process is repeatable and can be scaled up from small research and development projects, to production batches involving medium to large substrate areas.

Dr. Ms. Suvi Ellilä, Ph.D (Halmstad University department of Research & technology, Sweden)

High-purity metals for the best results We have the flexibility to produce Antimony Sputtering Target in shapes and sizes, and we never compromise in the purity of our raw materials. Our finished and semi-finished targets and our anodes are all made from the very highest purity of different metals.

Dr. Patrick Nilssen, (Northern Private University Olivos, Peru)

Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.

Antimony Sputtering Target

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