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Stock No. CAS MSDS Specification COA
NS6130-12-000155 99685-96-8 Specification pdf COA pdf

Boron Doped Carbon Nanotubes (Purity: 99.9%)

Boron Doped Carbon Nanotubes

Boron Doped Carbon Nanotubes (Purity: 99.9%)

Quality Control: Each lot of Boron Doped Carbon Nanotubes was tested successfully.

 
Product Boron Doped Carbon Nanotubes
Stock No NS6130-12-000155
CAS 99685-96-8 Confirm
Purity 99.9% Confirm
SSA 350-450* m2/g Confirm
Amorphous Carbon 1% Confirm
Residue (Calculation in Air) <1% Confirm
Bulk Density 0.05-0.17 g/cm3 Confirm
Real Density 2-3 g/cm3 Confirm
Charging * 2180 (Capacity: mA h/g) Confirm
Discharging* 534 (Capacity: mA h/g) Confirm
Volume Resistivity 0.1-0.15 ohm.cm Confirm
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%

Expert Reviews

Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)

Boron Doped Carbon Nanotubes and MWCNTs are structurally similar and share extraordinary mechanical properties, but they differ in chemical, optical, and electrical properties. The efficiency, power consumption, and weight of these types of devices are directly related to the available materials, their crystalline defects, and the suitability of these materials in relation to their inherent band gap energy levels.


Dr. Huojin Chan, (University of Science and Technology of China, Hefei, Anhui, China)

Boron Doped Carbon Nanotubes As such, the tunable optical property and impedance matching capability of BCN nanotubes can offer a number of new optical and electronic applications not currently available with either BNNTs or MWCNTs. Transistors require small band gap materials such as silicon to control the flow of current while photovoltaic cells operate by absorbing photons at the band gap of photoactive semiconductors to generate electricity.


Dr. Ms. Yi Yen Shi,, (King Mongkut's University of Technology Thonburi,Bangkok, Thailand)

Boron Doped Carbon Nanotubes are close analogues of carbon nanotubes (MWCNTs), but composed of hexagonal B-N bonding networks. MWCNTs possess purely covalent C-C bonds; by comparison, the B-N bond has partial ionic character due to the differences in electronegativity of boron and nitrogen. As a result, BNNTs are electrically insulating with a band gap of ~5 – 6 eV,4-6 while MWCNTs can be metallic or semiconducting.


Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)

Boron Doped Carbon Nanotubes exhibit high chemical stability, thermal stability (up to 800ºC in air), excellent thermal conductivity, a very high Young’s modulus (up to 1.3 TPa), piezoelectricity, the ability to suppress thermal neutron radiation, and, as matted fabric, display superhydrophobicity. These intriguing properties render BNNTs as ideal candidates for a variety of applications such as protective shields/capsules, mechanical and/or thermal reinforcements for polymer, ceramic, and metallic composites, self-cleaning materials, and biology/medicine.


Dr. Hans Roelofs , Ph.D (National Technical University of Athens, Greece)

Boron Doped Carbon Nanotubes The conductivity of other carbon materials is strongly affected by doping. Doping with alkali metals enhances the conductivity of graphite and fullerenes, resulting in superconductivity. Diamond has been found to become superconductor after it undergoes a metal-insulator transition by boron doping, even though undoped diamond is an insulator. The CNT crystal structure is intermediate between that of two-dimensional graphite and three-dimensional diamond. Considering these properties, we speculated that introduced elemental boron in CNTs would enhance their conductivity.


Boron Doped Carbon Nanotubes

Boron Doped Carbon Nanotubes


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