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Silicon/Cellulose Wafers
Boron Doped P Type Silicon Wafer
4 inches, Single Side Polished
Boron Doped P Type Silicon Wafer
Boron Doped P Type Silicon Wafer
| Product | Silicon Wafer 4” | |
| Stock No | NS6130-10-1110 | |
| CAS | 7440-21-3 | Confirm |
| Diameter | 4” | Confirm |
| Thickness | 300±10µm | Confirm |
| Dopant | Boron | Confirm |
| Crystal Orientation | <100> | Confirm |
| Type | P | Confirm |
| Growth Method | CZ/FZ | Confirm |
| Resistivity | 1.0-5.0Ω.cm | Confirm |
| TTV | <10.0µm | Confirm |
| STIR | <2µm | Confirm |
| GLOBAL TIR | <5µm | Confirm |
| Warp | <50.0µm | Confirm |
| LPD | <30 counts @ particles size>0.3µm | Confirm |
| Laser Mark | None | Confirm |
| Edge Profile | Rounded | Confirm |
| Front Surface | Polished | Confirm |
| Back Surface | Polished | Confirm |
| Bow | <50.0µm | Confirm |
| Quality Control | Each Lot of was tested successfully | |
| Main Inspect Verifier | Manager QC | |
Expert Reviews
