Product | Boron Nitride Sputtering Target | |
Stock No | NS6130-10-1036 | |
CAS | 10043-11-5 | Confirm |
Purity | 99.99% | Confirm |
Diameter | 50.8 mm ± 1mm | Confirm |
Thickness | 3 mm ± 0.5mm | Confirm |
Molecular Weight | 24.82 g/mol | Confirm |
Density | 2.1 g/cm³ | Confirm |
Melting Point | 2,973 °C | Confirm |
Shape | Round | Confirm |
Backing Plate | Copper (as per customer requirement) | |
Size and Shape | Targets Diameter and thickness can be according to Customer Requirement | |
Conclusion | The specifications Confirm with enterprise standard | |
Quality Control | Each Lot of Boron Nitride Sputtering Target was tested successfully | |
Main Inspect Verifier | Manager QC |
Typical Chemical Analysis
Assay | 99.99% |
Boron Nitride Sputtering Target is a chemical compound in which its chemical formula BN consists of equal numbers of boron and nitrogen atoms. The hardness of Boron nitride is inferior only to diamond. Because of excellent thermal and chemical stability, Boron Nitride is widely used in mechanical applications.
Boron Nitride Sputtering Target properties are high thermal conductivity, low thermal expansion, good thermal, shock resistance, low resistance, high electrical resistance, low dielectric constant and non toxicity. BN nanostructures are expected to be useful as electronic devices, field-effect transistors, high heat-resistant semiconductors, insulator lubricants, nanowires, magnetic nanoparticles and gas storage materials.
Boron Nitride Sputtering Target nanomaterials provide excellent protection against oxidation and wear, and they are electrical insulators. Therefore, magnetic nanoparticles coated with BN layers are very attractive candidates for applications such as MRI imaging or magnetic data storage.
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Boron Nitride Sputtering Target (BN, Purity: 99.99%, Dia: 50.8mm)