Boron Oxide Doped Silicon Wafer

Boron Oxide Doped Silicon Wafer

Product: Boron Oxide Doped Silicon Wafer

Product Name Boron Oxide Doped Silicon Wafer 2 inch
Product Code NS6130-10-1085
CAS 7440-21-3 Confirm
Diameter (mm) 2” (50.8mm) Confirm
Type P Type Confirm
Doping Boron Confirm
Crystal Orientation <100> Confirm
Surface Single Side Polished Confirm
Thickness 250-500μm Confirm
Resistivity 1-10ohm-cm Confirm
Crystal method CZ Confirm
RRG (%) ≤12 Confirm
Oxygen Contents (ppma) 12.5-16.5 Confirm
Carbon Contents (ppma) ≤1 Confirm
Main Inspect Verifier Manager QC

Experts Review:

Dr. Henrik Jensen,Ph.D (Middle East Technical University Ankara, Turkey)
Boron Oxide Doped Silicon Wafer is a non-metallic element which occurs in several allotropes. It is rarely found in nature, normally occurring as borates or orthoboric acid (the abundance of boron in the earth’s crust is 10 ppm, the principal ore being borax, Na2B4O7.xH2O). Amorphous boron is the more common allotrope and exists as a dark powder which is unreactive towards water, oxygen, acids and alkalis. Boron finds importance within nuclear reactors due to its neutron absorbing capabilities, boron steel being used as control rod material. Boron compounds are used for a number of applications including the manufacture of certain grades of glass and detergents.

Dr. Chiyoko Hayashi (Osaka University Suita, Japan)
Boron Oxide Doped Silicon Wafer will react directly with most metals to produce metal borides which are hard, inert binary compounds of various formulae and arrangements of the boron atoms. For example, as single atoms (M2B), pairs (M3B2), single and double chains (MB, M3B4), sheets (MB2), B6 octahedra (MB6) and B12 clusters (MB12). Boron also forms the binary compound, boron nitride, which is of interest as it is isoelectronic with carbon and occurs in two structural modifications; one is a layer structure similar to graphite which is soft and lubricating, whilst the other (formed under high pressure) has a very hard, stable, tetrahedral structure as found in diamond.

Dr. Joris Smits, Ph.D (Wrocław University of Technology, Poland)
Boron Oxide Doped Silicon Wafer , Boron Carbide and metal borides, because of their extreme hardness and abrasiveness, are used in the manufacture of specialty saw blades and abrasive wheels. Both have very high melting points: 3350°C and 3000°C, respectively. Due to its high hardness, boron carbide powder is used as an abrasive in polishing and lapping applications, and also as a loose abrasive in cutting applications such as water jet cutting. It can also be used for dressing diamond tools.

Dr. Ms. Sally Adams (National Technical University of Athens)
Boron Oxide Doped Silicon Wafer Corrosion Inhibitors – The alkalinity and strong buffering action of boron compounds makes it useful as part of solutions for preventing corrosion of ferrous metals. The principal use of borates in this field is probably in anti-freeze formulations. The value of borax in this application is enhanced by its high solubility in ethylene glycol, the major constituent for commercial antifreeze. Brake fluids and hydraulic systems in the motor industry also used boron compounds as a corrosion inhibitor, and it is also used as a corrosion inhibitor and a lubricant carrier in wire drawing.

Dr. Peter Bruggmann (Technical University of Madrid, Spain)
Boron Oxide Doped Silicon Wafer Refractories – Boron compounds are used as stabilizers and bonding agents in refractory and refractory cements to increase insulation/refractory properties of the concretes, bricks and other construction materials. Refractory materials must perform in very high temperatures by reflecting heat, for example in steel production, glass melting operations and kilns for firing ceramics.  In refractory bricks, boric acid is used in firebricks and castables that require high temperature resistance, corrosion and abrasion resistance.

Boron Oxide Doped Silicon Wafer

Boron Oxide Doped Silicon Wafer

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