Home » Carbon Doped Boron Nitride Nanotubes (SWCNT, 99%, Dia: <5nm, Length: 20-30um)

DOPED NANOPOWDERS

Stock No. CAS MSDS Specification COA
NS6130-06-682 308068-56-6 MSDS pdf Specification pdf COA pdf

Carbon Doped Boron Nitride Nanotubes (SWCNT, 99%, Dia: <5nm, Length: 20-30um)

Carbon Doped Boron Nitride Nanotubes

Carbon Doped Boron Nitride Nanotubes (SWCNT, 99%, Dia: <5nm, Length: 20-30um)

Quality Control: Each lot of Carbon Doped Boron Nitride Nanotubes was tested successfully.

FTIR Spectra of Amine -Carbon Doped Boron Nitride Nanotubes

FTIR Spectra of Amine -Carbon Doped Boron Nitride Nanotubes

XPS Spectra of Amine-Carbon Doped Boron Nitride Nanotubes

XPS Spectra of Amine-Carbon Doped Boron Nitride Nanotubes

 
Product Carbon Doped Boron Nitride Nanotubes
Stock No NS6130-06-682
CAS 308068-56-6 Confirm
Purity >99% (SWCNT) Confirm
HS Code 38119000 Confirm
Bulk density 0.05-0.17 g/cm³ Confirm
Real density 2-3 g/cm³ Confirm
SSA 350-450* m²/g Confirm
Amorphous carbon 1% Confirm
Residue ( calcination in air) <1% Confirm
Charging * 2180 (Capacity: mA h/g) Confirm
Discharging* 534 (Capacity: mA h/g) Confirm
Volume Resistivity 0.1-0.15 Ω.cm ( measured at pressure in powder)
Available Quantities 2Gms, 5Gms, 10Gms, 25Gms and larger quantites
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99%

Expert Reviews

Dr. Hans Roelofs Ph.D , (National Technical University of Athens, Greece)

Carbon Doped Boron Nitride Nanotubes: Doping on nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas. The electronic, optical, photochemical, photo-electrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by adding different elements. The materials can be engineered towards specific applications through careful selection of the dopants.


Dr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)

Carbon Doped Boron Nitride Nanotubes: Doping is a powerful and effective way to alter the electronic and optical properties of a semiconductor. Doping is essential in the semiconductor industry since most semiconductors including silicon are essentially insulators without doping at room temperature. The addition of dopant can introduce electronic and structural defects into the pristine nanomaterials that can be advantageous or deleterious.


Dr. Huojin Chan , (University of Science and Technology of China, Hefei, Anhui, China)

Carbon Doped Boron Nitride Nanotubes: Doping typically follows a Poisson distribution. The uniform doping is done either by growth or nucleation techniques by decoupling the doping and growth process. In nucleation doping reaction conditions are controlled in such a way along with judicious choice of reactants that a nucleus of dopant can be created and by shell growth of effectively confining the dopant to the center of particle.


Dr. Bruce Perrault, Ph.D , (Georgia Institute of Technology (Georgia Tech), USA)

Carbon Doped Boron Nitride Nanotubes: Nano-materials have been recently investigated due to their novel properties that are acquired at the nanometer scale, properties which change with size or shape. Besides the elemental composition and physical structure, as in bulk material or traditional chemistry, the size of the material provides another variable for us to tune the property of material. Moreover, a few dopants in the material can make the properties more adjustable.


Dr. Myron Rubenstein, Ph.D , (Polytechnic University of Turin, Italy)

Carbon Doped Boron Nitride Nanotubes: Dopant precursor substantially changes the reaction kinetics. Doped semiconductor nanomaterials are expected to play an important role in nanoelectronics and nanophotonic devices. Doping level of nanostructures will effects the properties and functionality of nanoparticles. Doped semiconductor nanomaterials constitute a unique and important class of nanomaterials with novel properties.


Carbon Doped Boron Nitride Nanotubes

Carbon Doped Boron Nitride Nanotubes


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