Electrostatic Quantum Dots (Cadmium Sulphide/Zinc Sulphide-MPA Quantum Dots-470nm)
Product: Electrostatic Quantum Dots
We provide high quality Electrostatic Quantum Dots (GA) ZnSe/ZnS, CdS/ZnS, CdSe/ZnS, InP/ZnS, InP/ZnS,and PbS QDs.
|Electrostatic Quantum Dots Stock No.||NS6130-12-000208|
|Application||Electrostatic Quantum Dots|
Dr. Ms. Kamiko Chang, Ph.D(University of Science and Technology Beijing, China)
In Electrostatic Quantum Dots, the potential confining the electrons is generated by the electrostatic field, which is created by the external voltages applied to the leads. Changing the geometry of the nanodevice we can obtain a diverse class of confinement potentials. The profile of the potential confining the electrons in quantum dots (QDs) only in few cases is known with the sufficient precision.
Dr. Nicholaos G. Demas (Newcastle University School Of Machanical & Systems Engg. UK)
Electrostatic Quantum Dots, sometimes referred to as artificial atoms, are small devices in which charge carriers are confined in all three dimensions. The confinement is usually achieved by electrical gating and/or etching techniques applied, e.g., to a two-dimensional electron gas. Since the dimensions of quantum dots are on the order of the Fermi wavelength, their electronic spectrum consists of discrete energy levels that have been studied in great detail in conductance and spectroscopy measurements.
Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Effects of Electrostatic Quantum Dots on the electronic properties of semiconductor heterostructures were well known prior to the study of quantum dots. Growth techniques such as molecular beam epitaxy, allows fabrication of quantum wells and heterojunctions with energy levels that are quantized along the growth direction. For proper choice of growth parameters, the electrons are fully confined in the z-direction.
Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
The most widely studied type of device is a lateral Electrostatic Quantum Dots defined by metallic surface gates. shows an SEM micrograph of a typical device. The tunnel barriers between the dot and the source and drain regions can be tuned using the left and right pair of gates. The dot can be squeezed to smaller size by applying a potential to the center pair of gates. Similar gated dots, with lithographic dimensions ranging from a few µm down to ~0.3 µm, have been studied by a variety of groups. The size of the dot formed in the 2DEG is somewhat smaller than the lithographic size, since the 2DEG is typically depleted 100 nm away from the gate.
Dr. Darren Chandler, Ph.D(Manchester Metropolitan University, U.K)
Compared with traditional organic dyes, the QDs developed in recent years have many attractive features, including high photobleaching threshold, good chemical stability, relatively narrow and symmetric luminescence bands. QDs’ unique optical properties make it an ideal choice for luminescent biological probes.
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