Home » Gallium Arsenide Nanopowder (GaAs, Purity: 99.99%, APS: 80-100nm)

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Stock No. CAS MSDS Specification COA
NS6130-12-000342 1303-00-0 MSDS pdf Specification pdf COA pdf

Gallium Arsenide Nanopowder

Gallium Arsenide Nanopowder (GaAs, Purity: 99.99%)

NS000342

TEM - Gallium Arsenide Nanopowder

TEM - Gallium Arsenide Nanopowder

Particles Size Analysis - Gallium Arsenide Nanopowder

Particles Size Analysis - Gallium Arsenide Nanopowder

 
Product Gallium Arsenide Nanopowder
Stock No. NS6130-12-000342
CAS 1303-00-0 Confirm
Purity 99.99% Confirm
APS 80-100nm Confirm
Molecular Formula GaAs Confirm
Molecular Weight 144.64g/mol Confirm
Form Powder Confirm
color Gray Confirm
Density 5.3g/cm3 Confirm
Melting Point 1400°C Confirm
Young Modulus 85 GPa Confirm
Thermal Conductivity 47 W/m-K Confirm
Solubility in water Insoluble in water
Quality Control Each lot of Gallium Arsenide Nanopowder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.99%
Gallium 48.2 %(±0.5)
Arsenic 51.79%(±0.5)
Other Metal 0.1%

Expert Reviews

Dr. Baron Augustin, Ph.D (TUM)(Technical University of Munich, Germany)

Gallium Arsenide Nanopowder is a Block P, Period 4 element, while arsenic is a Block P, Period 4 element. Gallium arsenide is a semiconductor with excellent electronic properties. The morphology of gallium arsenide nanoparticles is gray cubic crystals. Gallium arsenide nanoparticles used in various semiconductor and photo optic applications.


Dr. Darren Chandler, Ph.D (Manchester Metropolitan University, U.K)

Gallium Arsenide Nanopowder is a semiconductor used for a variety of optoelectronic applications due to its high absorption coefficient and carrier mobilit. Gallium arsenide based solar cells have demonstrated efficiencies as high as 29%. A critical loss mechanism in these devices is the reflection at the air- Gallium arsenide interface. Gallium arsenide solar cells and makes the antireflective structure crucial to achieving high cell efficiencies.


Dr. Ms. Cristiana Barzetti, (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)

The influence of surface Gallium Arsenide Nanopowder on the enhancement of Gallium arsenide photoluminescence efficiency. Gallium arsenide (GaAs) is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells. Devices makes solar panels using gallium arsenide cells, a more efficient material than the generally cheaper silicon-based cells.


Dr. Jang Huang, Ph.D (Shandong Science and Technology University, China)

Gallium Arsenide Nanopowder solar cells surpassed conventional, crystalline silicon-based solar cells. Gallium arsenide solar cells silicon as the cell type most commonly used for photovoltaic arrays for satellite applications. Gallium arsenide  is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells.


Dr. Mark Brown, (Georgia Institute of Technology in Atlanta,USA)

Gallium Arsenide Nanopowder used devices and configurations of the resulting nanostructures, The size and density of nanoparticles play critical roles. Gallium Arsenide nanoparticles has attracted wide scientific and technological interest due to the possibility of tuning the Gallium Arsenide Nanopowder (nanoparticle) band gap across the visible spectrum and their consequent use in optoelectronic devices. Used for the preparation of colloidal solutions of semiconducting and metallic nanoparticles, flexibility.


Gallium Arsenide Nanopowder

Gallium Arsenide Nanopowder


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