Product | Gallium Arsenide Nanopowder | |
Stock No. | NS6130-12-000342 | |
CAS | 1303-00-0 | Confirm |
Purity | 99.99% | Confirm |
APS | 80-100nm | Confirm |
Molecular Formula | GaAs | Confirm |
Molecular Weight | 144.64g/mol | Confirm |
Form | Powder | Confirm |
color | Gray | Confirm |
Density | 5.3g/cm3 | Confirm |
Melting Point | 1400°C | Confirm |
Young Modulus | 85 GPa | Confirm |
Thermal Conductivity | 47 W/m-K | Confirm |
Solubility in water | Insoluble in water | |
Quality Control | Each Lot of Gallium Arsenide Nanopowder was tested successfully | |
Main Inspect Verifier | Manager QC |
Typical Chemical Analysis
Assay | 99.99% |
Gallium | 48.2 %(±0.5) |
Arsenic | 51.79%(±0.5) |
Other Metal | 0.1% |
Gallium Arsenide Nanopowder is a Block P, Period 4 element, while arsenic is a Block P, Period 4 element. Gallium arsenide is a semiconductor with excellent electronic properties. The morphology of gallium arsenide nanoparticles is gray cubic crystals. Gallium arsenide nanoparticles used in various semiconductor and photo optic applications.
Gallium Arsenide Nanopowder is a semiconductor used for a variety of optoelectronic applications due to its high absorption coefficient and carrier mobilit. Gallium arsenide based solar cells have demonstrated efficiencies as high as 29%. A critical loss mechanism in these devices is the reflection at the air- Gallium arsenide interface. Gallium arsenide solar cells and makes the antireflective structure crucial to achieving high cell efficiencies.
The influence of surface Gallium Arsenide Nanopowder on the enhancement of Gallium arsenide photoluminescence efficiency. Gallium arsenide (GaAs) is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells. Devices makes solar panels using gallium arsenide cells, a more efficient material than the generally cheaper silicon-based cells.
Gallium Arsenide Nanopowder solar cells surpassed conventional, crystalline silicon-based solar cells. Gallium arsenide solar cells silicon as the cell type most commonly used for photovoltaic arrays for satellite applications. Gallium arsenide is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells.
Gallium Arsenide Nanopowder used devices and configurations of the resulting nanostructures, The size and density of nanoparticles play critical roles. Gallium Arsenide nanoparticles has attracted wide scientific and technological interest due to the possibility of tuning the Gallium Arsenide Nanopowder (nanoparticle) band gap across the visible spectrum and their consequent use in optoelectronic devices. Used for the preparation of colloidal solutions of semiconducting and metallic nanoparticles, flexibility.
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Gallium Arsenide Nanopowder (GaAs, Purity: 99.99%, APS: 80-100nm)