Gallium Arsenide Nanopowder (GaAs, Purity: 99.99%, APS: 80-100nm)

High Purity Nanopowder

Product: Gallium Arsenide Nanopowder (GaAs, Purity: 99.99%)

Quality Control: Each lot of NANOSHEL Gallium Arsenide Nanopowder was tested successfully.

SEM/TEM

Gallium Arsenide Nanopowder – SEM/TEM

Size Analysis of Gallium Arsenide

Size Analysis of Gallium Arsenide

Product Name Gallium Arsenide Nanopowder
Product Code NS6130-12-000342 Confirm
APS 80-100nm Confirm
Purity >99.99% Confirm
Group Gallium 13 Confirm
Group Arsenide 15 Confirm
Conclusion The specifications Confirm with enterprise standard
Main Inspect Verifier Manager QC

Chemical Composition

Gallium 48.2% Confirm
Arsenic 51.79 % Confirm

Physical Properties

Density 5.32 g/cm³ Confirm
Molar Mass 144.645 g/mol Confirm

Thermal Properties

Melting Point 1238 °C Confirm

Experts Review:

58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Gallium Arsenide Nanopowder
 is a Block P, Period 4 element, while arsenic is a Block P, Period 4 element. Gallium arsenide is a semiconductor with excellent electronic properties. The morphology of gallium arsenide nanoparticles is gray cubic crystals. Gallium arsenide nanoparticles used in various semiconductor and photo optic applications.


1252525Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Gallium Arsenide Nanopowder is a semiconductor used for a variety of optoelectronic applications due to its high absorption coefficient and carrier mobilit. Gallium arsenide based solar cells have demonstrated efficiencies as high as 29%. A critical loss mechanism in these devices is the reflection at the air- Gallium arsenide interface. Gallium arsenide solar cells and makes the antireflective structure crucial to achieving high cell efficiencies.


2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
The influence of surface Gallium Arsenide Nanopowder on the enhancement of Gallium arsenide photoluminescence efficiency. Gallium arsenide (GaAs) is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells. Devices makes solar panels using gallium arsenide cells, a more efficient material than the generally cheaper silicon-based cells.


10604509_1459864657612760_2405225879143508610_oDr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Gallium Arsenide Nanopowder solar cells surpassed conventional, crystalline silicon-based solar cells. Gallium arsenide solar cells silicon as the cell type most commonly used for photovoltaic arrays for satellite applications. Gallium arsenide  is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin film solar cells and for multi-junction solar cells.


125448Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
Gallium Arsenide Nanopowder used devices and configurations of the resulting nanostructures, The size and density of nanoparticles play critical roles. Gallium Arsenide nanoparticles has attracted wide scientific and technological interest due to the possibility of tuning the Gallium Arsenide Nanopowder (nanoparticle) band gap across the visible spectrum and their consequent use in optoelectronic devices. Used for the preparation of colloidal solutions of semiconducting and metallic nanoparticles, flexibility.


Gallium Arsenide Nanopowder

Gallium Arsenide Nanopowder



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