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Product | Gallium Arsenide Wafer | |
Stock No | NS6130-10-1494 | |
CAS | 1303-00-0 | Confirm |
Diameter | 150 ± 0.5mm | Confirm |
Thickness | 450µm | Confirm |
Dopant | Zn | Confirm |
Type | p-Type | Confirm |
Orientation | (100) 2° to (110) ± 0.1°, alpha = 45° | Confirm |
Growth Method | VGF (Vertical Gradient Freeze) | Confirm |
Surface | One Side Polished | Confirm |
Resistivity (ohm.cm) Seed End | 5.87E-03 | Confirm |
Hall mobility (cm2V-1s-1) Seed End | 72 | Confirm |
Carrier concentration (cm-3) Seed End | 1.48E+19 | Confirm |
Average EPD (cm-2) Seed End | 891 | Confirm |
Resistivity (ohm.cm) Tail End | 2.97E-03 | Confirm |
Hall mobility (cm2V-1s-1) Tail End | 55 | Confirm |
Carrier concentration (cm-3) Tail End | 3.83E+19 | Confirm |
Average EPD (cm-2) Tail End | 1108 | Confirm |
Quality Control | Each Lot of was tested successfully | |
Main Inspect Verifier | Manager QC |