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Home » Gallium Arsenide Wafer (GaAs, Dia: 150 ± 0.5 mm, P Type)

SILICON/CELLULOSE WAFERS

Stock No. CAS MSDS Specification COA
NS6130-10-1494 1303-00-0 MSDS pdf Specification pdf

Gallium Arsenide Wafer

(GaAs, Dia: 150 ± 0.5 mm, P Type)

Available Pack Size: 1Pc, 2Pcs, 5Pcs, 10Pcs & Bulk orders
 
Product Gallium Arsenide Wafer
Stock No NS6130-10-1494
CAS 1303-00-0 Confirm
Diameter 150 ± 0.5mm Confirm
Thickness 450µm Confirm
Dopant Zn Confirm
Type p-Type Confirm
Orientation (100) 2° to (110) ± 0.1°, alpha = 45° Confirm
Growth Method VGF (Vertical Gradient Freeze) Confirm
Surface One Side Polished Confirm
Resistivity (ohm.cm) Seed End 5.87E-03 Confirm
Hall mobility (cm2V-1s-1) Seed End 72 Confirm
Carrier concentration (cm-3) Seed End 1.48E+19 Confirm
Average EPD (cm-2) Seed End 891 Confirm
Resistivity (ohm.cm) Tail End 2.97E-03 Confirm
Hall mobility (cm2V-1s-1) Tail End 55 Confirm
Carrier concentration (cm-3) Tail End 3.83E+19 Confirm
Average EPD (cm-2) Tail End 1108 Confirm
Quality Control Each lot of Gallium Arsenide Wafer was tested successfully.
Main Inspect Verifier Manager QC

Gallium Arsenide Wafer

Gallium Arsenide Wafer


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