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Home » Gallium Nitride Wafer (GaN on Sapphire Wafer, Purity: >99.9%, Diameter: 2", Undoped)

SILICON/CELLULOSE WAFERS

Stock No. CAS MSDS Specification COA Catalogue
NS6130-10-1262 25617-97-4 MSDS pdf Specification pdf

Gallium Nitride Wafer

(GaN on Sapphire Wafer, Purity: >99.9%, Diameter: 2", Undoped)

Available Pack Size: 1Pc, 2Pcs, 5Pcs, 10Pcs & Bulk orders
 
Product Gallium Nitride Wafer
Stock No NS6130-10-1262
CAS 25617-97-4 Confirm
Purity >99.9% Confirm
Diameter 2” Confirm
Thickness 4µm ± 1µm Confirm
Thickness of Sapphire 650 ± 25μm for 4 inch Confirm
Substrate Sapphire Confirm
Dopant Undoped Confirm
TTV ≤ 15µm Confirm
Warp ≤15µm Confirm
Epi-Layer Doped GaN Epitxialon Sapphire Confirm
Bow ≤ 15µm Confirm
Orientation C-axis (001) ±1.0o Confirm
Edge Profile Rounded Confirm
Front Side Surface Polished Confirm
Backside Side Surface Etched Confirm
Quality Control Each lot of Gallium Nitride Wafer was tested successfully.
Main Inspect Verifier Manager QC

Gallium Nitride Wafer

Gallium Nitride Wafer


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