Product | Gallium Nitride Wafer | |
Stock No | NS6130-10-1262 | |
CAS | 25617-97-4 | Confirm |
Purity | >99.9% | Confirm |
Diameter | 2” | Confirm |
Thickness | 4µm ± 1µm | Confirm |
Thickness of Sapphire | 650 ± 25μm for 4 inch | Confirm |
Substrate | Sapphire | Confirm |
Dopant | Undoped | Confirm |
TTV | ≤ 15µm | Confirm |
Warp | ≤15µm | Confirm |
Epi-Layer | Doped GaN Epitxialon Sapphire | Confirm |
Bow | ≤ 15µm | Confirm |
Orientation | C-axis (001) ±1.0o | Confirm |
Edge Profile | Rounded | Confirm |
Front Side Surface | Polished | Confirm |
Backside Side Surface | Etched | Confirm |
Quality Control | Each Lot of Gallium Nitride Wafer was tested successfully | |
Main Inspect Verifier | Manager QC |
Nanoshel’s Product Categories Link:
Gallium Nitride Wafer (GaN on Sapphire Wafer, Purity: >99.9%, Diameter: 2", Undoped)