GaN Substrate (Gallium Nitride, Purity: >99.9%, Diameter: 4″, Si-Doped, N type)

GaN Substrate

Product: GaN Substrate (Purity: >99.9%, Diameter: 4″, Si-Doped, N type)

Quality Control: Each lot of NANOSHEL GaN Substrate was tested successfully.

Product Name GaN Substrate
Product Code NS6130-10-1268 Confirm
CAS No 25617-97-4 Confirm
Purity >99.9% Confirm
Diameter 2″ Confirm
Doping Si-doped Confirm
Thickness 4 µm ± 1µm Confirm
Orientation C-axis (001) ±1.0o Confirm
Resistivity (300K) <0.5 Ωcm Confirm
Dislocation Density <1×10^8 cm¯2 Confirm
Substrate Structure GaN on Sapphire (0001) Confirm
Polished Single Side Polished Confirm
EPI Reddy with Atomic Steps Confirm
Carrier Concenteration E17 – E18 Confirm
Conclusion The specifications Confirm with enterprise standard
Main Inspect Verifier Manager QC (GaN Substrate)

Experts Review:


Dr. Clive Patterson Ph.D (Moscow Institute of Physics and Technology, Russia)
Sputtering is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes. The process is repeatable and can be scaled up from small research and development projects, to production batches involving medium to large substrate areas.


Dr. Ms. Teresa B. (University of San Carlos, Philippines)
High-purity metals for the best results We have the flexibility to produce targets in shapes and sizes, and we never compromise in the purity of our raw materials. Our finished and semi-finished targets and our anodes are all made from the very highest purity of different metals.


Dr. Stew Dean Ph.D (University of Technology Sydney, Australia)
Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.


GaN Substrate

Gallium Nitride Substrates

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Contact Us for GaN Substrate
From us, you can easily purchase GaN Substrate at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com Contact: +1 302 268 6163 (US and Europe), Contact: +91-9779550077 (India). We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.


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