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Silicon/Cellulose Wafers
GaN Wafer
Gallium Nitride, Si-Doped, N type, Purity: >99.9%, Diameter: 2"
| Product | GaN Wafer | |
| Stock No | NS6130-10-1263 | |
| CAS | 25617-97-4 | Confirm |
| Purity | >99.9% | Confirm |
| Diameter | 2” | Confirm |
| Thickness | 4µm ± 1µm | Confirm |
| Thickness of Sapphire | 650 ± 25μm for 4inch | Confirm |
| Substrate | Sapphire | Confirm |
| Dopant | Silicon | Confirm |
| Type | N Type | Confirm |
| TTV | ≤ 10µm | Confirm |
| Warp | ≤10µm | Confirm |
| Epi-Layer | Doped GaN Epitxialon Sapphire | Confirm |
| Orientation | C-axis (001) ±1.0o | Confirm |
| Resistivity | 0.01 - 0.1 Ohm-cm | Confirm |
| Bow | ≤ 10µm | Confirm |
| Edge Profile | Rounded | Confirm |
| Front Side Surface | Polished | Confirm |
| Backside Side Surface | Etched | Confirm |
| Quality Control | Each Lot of was tested successfully | |
| Main Inspect Verifier | Manager QC | |
