Product | GaN Wafer | |
Stock No | NS6130-10-1263 | |
CAS | 25617-97-4 | Confirm |
Purity | >99.9% | Confirm |
Diameter | 2” | Confirm |
Thickness | 4µm ± 1µm | Confirm |
Thickness of Sapphire | 650 ± 25μm for 4inch | Confirm |
Substrate | Sapphire | Confirm |
Dopant | Silicon | Confirm |
Type | N Type | Confirm |
TTV | ≤ 10µm | Confirm |
Warp | ≤10µm | Confirm |
Epi-Layer | Doped GaN Epitxialon Sapphire | Confirm |
Orientation | C-axis (001) ±1.0o | Confirm |
Resistivity | 0.01 - 0.1 Ohm-cm | Confirm |
Bow | ≤ 10µm | Confirm |
Edge Profile | Rounded | Confirm |
Front Side Surface | Polished | Confirm |
Backside Side Surface | Etched | Confirm |
Quality Control | Each Lot of GaN Wafer was tested successfully | |
Main Inspect Verifier | Manager QC |
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GaN Wafer (Gallium Nitride, Si-Doped, N type, Purity: >99.9%, Diameter: 2")