Hafnium Boride Powder (HfB2, Purity: 99.9%, APS: ≤45 μm)

High Purity Hafnium Boride Powder

Product Hafnium Boride Powder (HfB2, Purity: 99%, APS: 80-100nm)

Quality Control: Each lot of Hafnium Boride Powder was tested successfully.

Hafnium Boride Powder

Hafnium Boride Powder SEM/TEM

Hafnium Boride 2

Reflectance spectra of Hafnium Boride

 

Product Name Hafnium Boride Powder 
Stock No NS6130-12-000459
CAS 12007-23-7 Confirm
APS ≤45 μm Confirm
Molecular Formula HiB2 Confirm
Purity 99.9% Confirm
Density 10.5 g/cm3 Confirm
Melting Point 3250 °C Confirm
Color Black Confirm
Form Powder Confirm
Morphology Hexagonal Confirm
Available Quantities 25Gms, 50Gms, 100Gms and larger quantities
Main Inspect Verifier Manager QC

Typical Chemical Analysis of Hafnium Boride

Assay 99.9 %
Zr ≤ 0.5 %
B ≤ 10.7 %
Fe ≤ 0.02 %
S ≤ 0.001 %
N ≤ 0.01 %
C ≤ 0.08 %

Experts Review:

58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Transition metal diborides and their coatings offer an excellent combination of high hardness, high chemical stability and high thermal conductivity, thus they are excellent candidates for a wide range of tribological applications. Stoichiometric hafnium diboride films were grown by chemical vapor deposition from a single-source, heteroatom-free precursor Hf(BH4)4 under conditions that afford highly conformal and smooth films. Nanoshel’s hafnium Boride films of thickness ∼0.6 μm deposited on steel substrates were subjected to pin-on-disk wear testing against a counter face disc of AISI 440C martensitic stainless steel.


1252525Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Nanoshel’s Hafnium Boride
 has potential applications in microelectronics: it performs well as a diffusion barrier between copper and silicon and it has been investigated as a contact metal and a gate electrode material for Si metal-oxide-semiconductor fieldeffect transistors.


2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Nanoshel’s Hafnium Boride (HfB2), a metallic ceramic material, has a high melting point (3250 °C), excellent chemical resistance, high hardness (bulk value 29 GPa), and high electrical conductivity (bulk value 15 mΩ cm). These properties make it potentially useful for microelectronics and hard coating applications.


10604509_1459864657612760_2405225879143508610_oDr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Nanoshel’s Hafnium Boride
 offers an excellent combination of high bulk hardness (29 GPa), high melting point (3295 °C) and high wear resistance, thus making it an attractive material for wear resistant coatings. In this work, the nanoscale friction response of as-deposited and annealed Hafnium Boride films is reported.


125448Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
All reactor fission process in controlled by balancing the reactivity in the core. The core it self contains structure materials. Which absorb neutrons and the fission process in influenced by the energy of the neutrons and the effectiveness of the moderation. The control rods contains either a silver/indium/cadmium alloy as in some cases Hafnium, boric acid in used as a dissolved absorbs provide bulk reactivity control.


Hafnium Boride Web

Hafnium Boride Powder



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