Silicon/Cellulose Wafers
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Heavily Doped Silicon Wafer
2 inches, N Type
Heavily Doped Silicon Wafer
NS1121

Preview
Heavily Doped Silicon Wafer
Product | Silicon Wafer 3” | |
Stock No | NS6130-10-1121 | |
CAS | 7440-21-3 | |
Diameter | 3” | |
Thickness | 525µm | |
Dopant | Boron | |
Crystal Orientation | <100> | |
Type | N | |
Growth Method | CZ | |
Resistivity | 1.0-5.0Ω.cm | |
TTV | <10.0µm | |
STIR | <2µm | |
GLOBAL TIR | <5µm | |
Warp | <50.0µm | |
LPD | <30 counts @ particles size>0.3µm | |
Laser Mark | None | |
Edge Profile | Rounded | |
Front Surface | Polished | |
Back Surface | Etched | |
Bow | <50.0µm | |
Quality Control | Each Lot of Silicon Wafer 3” was tested successfully | |
Main Inspect Verifier | Manager QC |
Expert Reviews

Heavily Doped Silicon Wafer
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