Heavily Doped Silicon Wafer
2 inches, N Type
Stock No.
NS6130-10-1121
CAS
7440-21-3
MSDS
Specifications
COA
Catalogue
Heavily Doped Silicon Wafer
NS1121
Heavily Doped Silicon Wafer
| Product | Silicon Wafer 3” | |
| Stock No | NS6130-10-1121 | |
| CAS | 7440-21-3 | |
| Diameter | 3” | |
| Thickness | 525µm | |
| Dopant | Boron | |
| Crystal Orientation | <100> | |
| Type | N | |
| Growth Method | CZ | |
| Resistivity | 1.0-5.0Ω.cm | |
| TTV | <10.0µm | |
| STIR | <2µm | |
| GLOBAL TIR | <5µm | |
| Warp | <50.0µm | |
| LPD | <30 counts @ particles size>0.3µm | |
| Laser Mark | None | |
| Edge Profile | Rounded | |
| Front Surface | Polished | |
| Back Surface | Etched | |
| Bow | <50.0µm | |
| Quality Control | Each Lot of was tested successfully | |
| Main Inspect Verifier | Manager QC | |
Expert Reviews
Heavily Doped Silicon Wafer
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*Exchanges of materials/products are not permitted. Nanoshel does not offer refunds.
*US Dollar Cheques Not Accepted, Only Bank TT/Credit Cards Accepted