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Indium Arsenide Nanopowder (InAS, Purity: 99.99%, APS: 80-100nm)

High Purity Nanopowder

Product: Indium Arsenide Nanopowder (InAS, Purity: 99.99%)

Quality Control: Each lot of NANOSHEL Indium Arsenide Nanopowder was tested successfully.

TEM  NS6130-12-000343

Indium Arsenide Nanopowder – SEM/TEM

Size Analysis of Indium Arsenide

Size Analysis of Indium Arsenide

Product Name Indium Arsenide Nanopowder
Product Code NS6130-12-000343 Confirm
APS 80-100nm Confirm
Purity >99.99% Confirm
Appearance and Odor Metallic crystals and No Odor Confirm
Group Indium 13 Confirm
Group Arsenide 15 Confirm
SSA 9-9.5 m2/g Confirm
Conclusion The specifications Confirm with enterprise standard
Main Inspect Verifier Manager QC

Chemical Composition

Indium 52 % Confirm
Arsenic 48 % Confirm

Mechanical Properties

Density 5.50 g/cm³ Confirm
Molar Mass 189.74 g/mol Confirm
Bulk Modulus 6.62×1011 dyn/cm2 Confirm

Thermal Properties

Thermal Expansion Coefficient 5.66×10-6 °C-1 Confirm
Specific Heat Capacity 0.3 J g-1°C-1 Confirm
Thermal Conductivity 0.05 W cm-1°C-1 Confirm

Experts Review:

58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Indium Arsenide Nanopowder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.Indium Arsenide Nanopowder is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.


1252525Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of Indium Arsenide Nanopowder on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.


2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Gallium arsenide (GaAs), Indium Arsenide Nanopowder (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.


10604509_1459864657612760_2405225879143508610_oDr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Indium Arsenide Nanopowder is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.


125448Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
Indium Arsenide Nanopowder (InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.


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Indium Arsenide Nanopowder

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More Arsenide Powder by Nanoshel

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NS6130-12-000343 – Indium Arsenide Nanopowder (InAS, Purity: 99.99%, APS: 80-100nm)

NS6130-12-000344 – Indium Gallium Arsenide Nanoparticles (InGaAs, Purity: 99.9%, APS: <100 nm)

NS6130-12-000351 – Gallium Arsenide Finepowder (GaAs, Purity: 99.99%, APS: 40-50 µm)

NS6130-12-000352 – Indium Arsenide Finepowder (InAS, Purity: 99.99%, APS: 40-50 µm)