High Purity Nanopowder
Product: Indium Arsenide Nanopowder (InAS, Purity: 99.99%)
Quality Control: Each lot of NANOSHEL Indium Arsenide Nanopowder was tested successfully.
|Product Name||Indium Arsenide Nanopowder|
|Appearance and Odor||Metallic crystals and No Odor||Confirm|
|Conclusion||The specifications Confirm with enterprise standard|
|Main Inspect Verifier||Manager QC|
|Molar Mass||189.74 g/mol||Confirm|
|Bulk Modulus||6.62×1011 dyn/cm2||Confirm|
|Thermal Expansion Coefficient||5.66×10-6 °C-1||Confirm|
|Specific Heat Capacity||0.3 J g-1°C-1||Confirm|
|Thermal Conductivity||0.05 W cm-1°C-1||Confirm|
Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Indium Arsenide Nanopowder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.Indium Arsenide Nanopowder is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.
Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of Indium Arsenide Nanopowder on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.
Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Gallium arsenide (GaAs), Indium Arsenide Nanopowder (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
Dr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Indium Arsenide Nanopowder is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.
Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
Indium Arsenide Nanopowder (InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.
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