Home » Indium Arsenide Powder (InAs, Purity: 99.99%, APS: 40-50 µm)

ARSENIDES

Stock No. CAS MSDS Specification COA
NS6130-12-000352 106097-59-0 MSDS pdf Specification pdf COA pdf

Indium Arsenide Powder

Indium Arsenide Powder (InAs, Purity: 99.99%, 40-50 µm)

NS000352

TEM -  Indium Arsenide Powder

TEM - Indium Arsenide Powder

Particles Size Analysis -  Indium Arsenide Powder

Particles Size Analysis - Indium Arsenide Powder

 
Product Indium Arsenide Powder
Stock No. NS6130-12-000352
CAS 1303-11-3 Confirm
Purity 99.99% Confirm
APS 40-50µm Confirm
Molecular Formula InAs Confirm
Molecular Weight 189.740g/mol Confirm
Form Powder Confirm
color Gray Confirm
Density 5.67g/cm3 Confirm
Melting Point 942°C Confirm
Refractive Index 3.51 Confirm
Dielectric Constant 15.15 Confirm
Electrton Mobility 40000(cm2/(V*s)) Confirm
Storage Normal Room Temperature Confirm
Thermal Conductivity 0.27(300K (W/cm•K)) Confirm
Specific Heat Capacity 47.8 J•mol-1•K-1 Confirm
Solubility in water Insoluble in water
Quality Control Each lot of Indium Arsenide Powder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.99%

Expert Reviews

Dr. Baron Augustin, Ph.D (TUM)(Technical University of Munich, Germany)

Indium Arsenide Powder( InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.


Dr. Darren Chandler, Ph.D (Manchester Metropolitan University, U.K)

Indium Arsenide Powder is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Powder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.


Dr. Ms. Cristiana Barzetti, (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)

Indium Arsenide Powder (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.


Dr. Jang Huang, Ph.D (Shandong Science and Technology University, China)

Indium Arsenide Powder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of InAs on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.


Dr. Mark Brown, (Georgia Institute of Technology in Atlanta,USA)

Indium Arsenide Powder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.


Indium Arsenide Powder

Indium Arsenide Powder


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