Indium Arsenide Powder (InAs, Purity: 99.99%, APS: 40-50 µm)

High Purity Powder

Product: Indium Arsenide Powder (InAs, Purity: 99.99%, 40-50 µm)

Quality Control: Each lot of NANOSHEL Indium Arsenide Powder was tested successfully.

TEM NS6130-12-000343

Indium Arsenide Powder – SEM/TEM

Size Analysis of Indium Arsenide Powder

Size Analysis of Indium Arsenide Powder

Product Name Indium Arsenide Powder
Product Code NS6130-12-000352 Confirm
APS 40-50 µm Confirm
Purity >99.99% Confirm
Appearance and Odor Metallic crystals and No Odor Confirm
Group Indium 13 Confirm
Group Arsenide 15 Confirm
SSA 9-9.5 m²/g Confirm
Conclusion The specifications Confirm with enterprise standard
Main Inspect Verifier Manager QC

Chemical Composition

Indium 52 % Confirm
Arsenic 48 % Confirm

Mechanical Properties

Density 5.50 g/cm³ Confirm
Molar Mass 189.74 g/mol Confirm
Bulk Modulus 6.62×1011 dyn/cm2 Confirm

Thermal Properties

Thermal Expansion Coefficient 5.66×10-6 °C-1 Confirm
Specific Heat Capacity 0.3 J g-1°C-1 Confirm
Thermal Conductivity 0.05 W cm-1°C-1 Confirm

Experts Review:

58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Indium Arsenide Powder
( InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.


1252525Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Indium Arsenide Powder
 is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Powder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.


2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Indium Arsenide Powder (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.


10604509_1459864657612760_2405225879143508610_oDr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Indium Arsenide Powder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of InAs on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.


125448Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
Indium Arsenide Powder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.


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Contact Us for Indium Arsenide Powder 
From us, you can easily purchase nano materials at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com Contact: +1 302 268 6163 (US and Europe), Contact: +91-9779550077 (India). We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.

More Arsenide Powder by Nanoshel

NS6130-12-000342 – Gallium Arsenide Nanopowder (GaAs, Purity: 99.99%, APS: 80-100nm)

NS6130-12-000343 – Indium Arsenide Nanopowder (InAS, Purity: 99.99%, APS: 80-100nm)

NS6130-12-000344 – Indium Gallium Arsenide Nanoparticles (InGaAs, Purity: 99.9%, APS: <100 nm)

NS6130-12-000351 – Gallium Arsenide Finepowder (GaAs, Purity: 99.99%, APS: 40-50 µm)

NS6130-12-000352 – Indium Arsenide Finepowder (InAS, Purity: 99.99%, APS: 40-50 µm)