Home » Phosphorus Doped Silicon Wafer (4 inch, N Type)

SILICON/CELLULOSE WAFERS

Stock No. CAS MSDS Specification COA
NS6130-10-1111 7440-21-3 MSDS pdf Specification pdf COA pdf

Phosphorus Doped Silicon Wafer (4 inch, N Type)

Phosphorus Doped Silicon Wafer

Phosphorus Doped Silicon Wafer (4 inch, N Type)

Quality Control: Each lot of Silicon Wafer 4” was tested successfully.

Phosphorus Doped Silicon Wafer

Phosphorus Doped Silicon Wafer

 
Product Silicon Wafer 4”
Stock No NS6130-10-1111
CAS 7440-21-3
Diameter 4”
Thickness 300±10µm
Dopant Phosphorus
Crystal Orientation <100>
Type N
Growth Method CZ/FZ
Resistivity 1.0-5.0Ω.cm
TTV <10.0µm
STIR <2µm
GLOBAL TIR <5µm
Bow <50.0µm
Warp <50.0µm
LPD <30 counts @ particles size>0.3µm
Laser Mark None
Edge Profile Rounded
Front Surface Polished
Back Surface Etched
Main Inspect Verifier Manager QC

Expert Reviews

Dr. Henrik Jensen,Ph.D , (Middle East Technical University Ankara, Turkey)

Silicon wafers are key component in integrated circuits. Integrated circuits are, simply put a composite of various electronic components that are arranged to perform a specific function. Silicon is the principle platform for semiconductor devices. A wafer is a thin slice of the semiconductor material, which serves as the substrate for microelectronic devices built in and over the wafer.


Dr. Chiyoko Hayashi , (Osaka University Suita, Japan)

As silicon wafer’s primary use is in integrated circuits. Integrated circuits power many of devices that can be used by society everyday. Computers and smartphones are just two of the devices that are dependent on this technology. Silicon is the stable among all the semiconductors. Other uses include sensors, such as the tire pressure sensor system and solar cells. Silicon wafers absorbs the photons in sunlight and this in turn create electricity.


Dr. Joris Smits, Ph.D , (Wrocław University of Technology, Poland)

The wafers serves as the substrates for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials and photolithographic pattering.


Dr. Ms. Sally Adams , (National Technical University of Athens)

Silicon wafers are available in a variety of diameters from 25.4mm (1 inch) to 300mm. The diameter has gradually increased to improve throughput and reduce cost with the current state –of-the-art of fab considered to be 300mm with the next standard projected to be 450mm.


Dr. Peter Bruggmann , (Technical University of Madrid, Spain)

Wafer thickness is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystals having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depths depend on the wafer’s crystal orientation, since each direction offers distinct paths for transport.


Phosphorus Doped Silicon Wafer

Phosphorus Doped Silicon Wafer