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Home » Phosphorus doped Silicon Wafers (Si, Dia: 8”, N Type)


Stock No. CAS MSDS Specification COA
NS6130-10-1080 7440-21-3 MSDS pdf Specification pdf

Phosphorus doped Silicon Wafers

Product: Phosphorus doped Silicon Wafers (Si, Dia: 8”, N Type)


Phosphorus doped Silicon Wafers

Phosphorus doped Silicon Wafers

Product Phosphorus doped Silicon Wafers
Stock No NS6130-10-1080
CAS 7440-21-3 Confirm
Diameter 8” Confirm
Thickness 500µm Confirm
Crystal Orientation <100> Confirm
Type N Type Confirm
Growth Method CZ Confirm
Resistivity 1-10Ω/cm Confirm
CZ Resistivity 1 to 150mΩ.cm Confirm
TTV <10µm Confirm
STIR <2µm Confirm
GLOBAL TIR <5µm Confirm
LPD <30 counts @ particles size>0.3µm Confirm
Laser Mark None Confirm
Edge Profile Rounded Confirm
Doping Phosphorous Confirm
Bow <5µm Confirm
Standard Tolerance ±0.5° Confirm
Front Side Surface Polished Confirm
Backside Side Surface Etched Confirm
Quality Control Each lot of Phosphorus doped Silicon Wafers was tested successfully.
Main Inspect Verifier Manager QC

Expert Reviews

Dr. Henrik Jensen,Ph.D , (Middle East Technical University Ankara, Turkey)

Phosphorus doped Silicon Wafers: Silicon wafers are key component in integrated circuits. Integrated circuits are, simply put a composite of various electronic components that are arranged to perform a specific function. Silicon is the principle platform for semiconductor devices.  A wafer is a thin slice of the semiconductor material, which serves as the substrate for microelectronic devices built in and over the wafer.

Dr. Chiyoko Hayashi , (Osaka University Suita, Japan)

Phosphorus doped Silicon Wafers: As silicon wafer’s primary use is in integrated circuits. Integrated circuits power many of devices that can be used by society everyday. Computers and smartphones are just two of the devices that are dependent on this technology. Silicon is the stable among all the semiconductors. Other uses include sensors, such as the tire pressure sensor system and solar cells. Silicon wafers absorbs the photons in sunlight and this in turn create electricity.

Dr. Joris Smits, Ph.D , (Wrocław University of Technology, Poland)

Phosphorus doped Silicon Wafers: The wafers serves as the substrates for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials and photolithographic pattering.

Dr. Ms. Sally Adams , (National Technical University of Athens)

Phosphorus doped Silicon Wafers: Silicon wafers are available in a variety of diameters from 25.4mm (1 inch) to 300mm. The diameter has gradually increased to improve throughput and reduce cost with the current  state –of-the-art of fab considered to be 300mm with the next standard projected to be 450mm.

Dr. Peter Bruggmann , (Technical University of Madrid, Spain)

Phosphorus doped Silicon Wafers: Wafer thickness is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystals having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depths depend on the wafer’s crystal orientation, since each direction offers distinct paths for transport.

Phosphorus doped Silicon Wafers

Phosphorus doped Silicon Wafers

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