Home » Phosphorus doped Silicon Wafers (Si, Dia: 8”, N Type)
SILICON/CELLULOSE WAFERS
| Stock No. | CAS | MSDS | Specification | COA |
|---|---|---|---|---|
| NS6130-10-1080 | 7440-21-3 |
|
|
Phosphorus doped Silicon Wafers
Product: Phosphorus doped Silicon Wafers (Si, Dia: 8”, N Type)
NS1080
Phosphorus doped Silicon Wafers
| Product | Phosphorus doped Silicon Wafers | |
| Stock No | NS6130-10-1080 | |
| CAS | 7440-21-3 | Confirm |
| Diameter | 8” | Confirm |
| Thickness | 500µm | Confirm |
| Crystal Orientation | <100> | Confirm |
| Type | N Type | Confirm |
| Growth Method | CZ | Confirm |
| Resistivity | 1-10Ω/cm | Confirm |
| CZ Resistivity | 1 to 150mΩ.cm | Confirm |
| TTV | <10µm | Confirm |
| STIR | <2µm | Confirm |
| GLOBAL TIR | <5µm | Confirm |
| LPD | <30 counts @ particles size>0.3µm | Confirm |
| Laser Mark | None | Confirm |
| Edge Profile | Rounded | Confirm |
| Doping | Phosphorous | Confirm |
| Bow | <5µm | Confirm |
| Standard Tolerance | ±0.5° | Confirm |
| Front Side Surface | Polished | Confirm |
| Backside Side Surface | Etched | Confirm |
| Quality Control | Each lot of Phosphorus doped Silicon Wafers was tested successfully. | |
| Main Inspect Verifier | Manager QC | |
Expert Reviews
Dr. Chiyoko Hayashi , (Osaka University Suita, Japan)
Phosphorus doped Silicon Wafers: As silicon wafer’s primary use is in integrated circuits. Integrated circuits power many of devices that can be used by society everyday. Computers and smartphones are just two of the devices that are dependent on this technology. Silicon is the stable among all the semiconductors. Other uses include sensors, such as the tire pressure sensor system and solar cells. Silicon wafers absorbs the photons in sunlight and this in turn create electricity.
Dr. Joris Smits, Ph.D , (Wrocław University of Technology, Poland)
Phosphorus doped Silicon Wafers: The wafers serves as the substrates for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials and photolithographic pattering.
Dr. Ms. Sally Adams , (National Technical University of Athens)
Phosphorus doped Silicon Wafers: Silicon wafers are available in a variety of diameters from 25.4mm (1 inch) to 300mm. The diameter has gradually increased to improve throughput and reduce cost with the current state –of-the-art of fab considered to be 300mm with the next standard projected to be 450mm.
Dr. Peter Bruggmann , (Technical University of Madrid, Spain)
Phosphorus doped Silicon Wafers: Wafer thickness is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystals having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depths depend on the wafer’s crystal orientation, since each direction offers distinct paths for transport.
Phosphorus doped Silicon Wafers
From us, you can easily purchase Phosphorus doped Silicon Wafers at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com. We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.
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Dr. Henrik Jensen,Ph.D , (Middle East Technical University Ankara, Turkey)
Phosphorus doped Silicon Wafers: Silicon wafers are key component in integrated circuits. Integrated circuits are, simply put a composite of various electronic components that are arranged to perform a specific function. Silicon is the principle platform for semiconductor devices. A wafer is a thin slice of the semiconductor material, which serves as the substrate for microelectronic devices built in and over the wafer.