Quantum Dot Electroluminescence Device (Cadmium Selenide/Zinc Sulphide-PEG-COOH Quantum Dots-620nm)

Quantum Dot Electroluminescence Device (Cadmium Selenide/Zinc Sulphide-PEG-COOH Quantum Dots-620nm)

Product:Quantum Dot Electroluminescence Device

We provide high quality Quantum Dot Electroluminescence Device (GA) ZnSe/ZnS, CdS/ZnS, CdSe/ZnS, InP/ZnS, InP/ZnS,and PbS QDs.

Quantum Dot Electroluminescence Device

Quantum Dot Electroluminescence Device SEM

Quantum Dot Electroluminescence Device

Quantum Dot Electroluminescence Device XRD

Quantum Dot Electroluminescence Device Stock No. NS6130-12-000220
Emission Peak 620±25nm
Surface Group PEG-COOH
Solvent Water
Application Quantum Dot Electroluminescence Device

Experts Review:

Dr. Ms. Kamiko Chang, Ph.D(University of Science and Technology Beijing, China)
Quantum Dot Electroluminescence Device design is the choice of organic charge transporting layers that surround the Quantum Dots Electroluminescence Device centers. In an archetypical QD-LED structure electrons are injected from a metallic cathode into an electron-transporting layer (ETL), holes are injected from a transparent anode into a hole-transporting layer (HTL); carriers then travel toward the layer of QDs. The spectrally narrow electroluminescence (EL) of QD-LEDs is dominated by QD emission, indicating that a majority of the excitons generated in these structures recombine on QD sites.


images (12) Dr. Nicholaos G. Demas (Newcastle University School Of Machanical & Systems Engg. UK)
Considering the energy alignment of the ground and excited electronic states of QD monolayers and the surrounding organic thin films in a Quantum Dot Electroluminescence Device can provide insights into the operation of these devices. We note that for organic wide band gap hole-transporting materials used in OLEDs to date the HOMO level is typically positioned between 5.0 and 6.0 eV below the vacuum level. As the same hole-transporting materials are utilized in hybrid QDLEDs, there is a significant potential energy step for the hole injection into the QD valence band positioned >6.6 eV below the vacuum level.


58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Quantum Dot Electroluminescence Device solutions for the white QD-LEDs were prepared by mixing red, green, and blue QD solutions so that the R:G:B QD ratio in the film is 1:2:10. The R:G:B QD ratio was chosen in part to compensate for the differences in PL efficiency of different QD samples. Additionally, QD-toQD proximity in the electroluminescent QD monolayer enables exciton energy transfer from higher energy to lower energy QDs,17,18 red shifting the overall emission, and necessitating a higher concentration of blue QDs in the QD monolayer. Consequently, blue QDs of high luminescence efficiency are needed for efficient QD-LED operation.


2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
The Quantum Dot Electroluminescence Device contain three types of QDs with different responses to charge injection, leading to a change in the EL spectrum at different driving conditions. the EL spectrum color shift in a mixedmonolayer QD-LED as the applied bias increases from 5 to 9 V, resulting in a small change of the CIE coordinates and CRI. With increasing voltage we observe an increase of the red and blue QD spectral components in the EL spectrum relative to the initially dominant green QD spectral component.


images (33)

Dr. Darren Chandler, Ph.D(Manchester Metropolitan University, U.K)
Quantum Dot Electroluminescence Device fabrication is the choice of QD deposition technique. Since all the QDs used in our study are fabricated via different synthetic procedures,15-19 and consequently their surfaces are passivated by different organic ligands, it is beneficial to identify a flexible deposition method that allows controlled placement of QD types with different surface chemistries into an identical device structure. We chose to utilize a recently demonstrated QD contact printing technique, which allows us to deposit close-packed monolayers of solvent-free QDs onto evaporated spiroTPD HTL, without exposing the device structure to solvents that could precipitate thin film morphological changes.


Cadmium Selenide/Zinc Sulphide-MPA Quantum Dots

Cadmium Selenide/Zinc Sulphide-PEG-COOH Quantum Dots

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