Quantum Dot Semiconductor Optical Amplifiers (CdSe/ZnS-PEG-COOH Qds-500nm)
Product: Quantum Dot Semiconductor Optical Amplifiers
We provide high quality Quantum Dot Semiconductor Optical Amplifiers (GA) ZnSe/ZnS, CdS/ZnS, CdSe/ZnS, InP/ZnS, InP/ZnS,and PbS QDs.
|Quantum Dot Semiconductor Optical Amplifiers Stock No.||NS6130-12-000211|
|Application||Quantum Dot Semiconductor Optical Amplifiers|
Dr. Ms. Kamiko Chang, Ph.D(University of Science and Technology Beijing, China)
Quantum Dot Semiconductor Optical Amplifiers are one of the key parts of the telecommunication systems. Their active medium increases number of the photons due to the stimulated recombination and thus increases the optical power. New created photons have the same direction and the phase as the initial ones, so amplification keeps the information, carried by the photons.
Dr. Nicholaos G. Demas (Newcastle University School Of Machanical & Systems Engg. UK)
There are two main applications of the Quantum Dot Semiconductor Optical Amplifiers, when the device linearly increases the optical power, and the signal processing, when the device changes one signal corresponding to the power or the phase of another one. The linear amplification is used mainly to send a signal over long spans with significant losses. The signal processing is used to change a wavelength of the signal, to regenerate signal to its initial shape and suppress distortions, in all-optical logic elements and for other aims.
Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
The optical and electronic properties Quantum Dot Semiconductor Optical Amplifiers have been a subject of intense theoretical and experimental research over the last decades. Besides the fundamental interest in the underlying physics there is a wide range of possible applications for example in optical communications.
Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Quantum Dot Semiconductor Optical Amplifiers can be regarded as mesoscopic or nanoscaled objects capable of confining electrons in all three spatial dimensions. Nowadays, QDs can be fabricated in several ways, with the major distinction between epitaxial growth methods, chemical synthesis or state of the art lithography and etching techniques, and exhibit a wide range of sizes and material compositions.
Dr. Darren Chandler, Ph.D(Manchester Metropolitan University, U.K)
The main focus of this thesis lies on the investigation of the dynamical properties of Quantum Dot Semiconductor Optical Amplifiers. Structurally, QD SOAs are similar to quantum dot Fabry-Perot laser diodes. The major difference between QD lasers and QD SOAs is the degree of reflectivity of the end facets. For a SOA the reflectivity is engineered as small as possible, modern designs with tilted waveguides and antireflection coatings at the end facets allow refectivities as low as 10ˉ⁵, thus efficiently suppressing the longitudinal modes.
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