Silicon Carbide Crucibles (Available Sizes 5ml – 100ml)

Silicon Carbide Crucibles

Silicon Carbide Crucible

Quality Control: Each lot of Nanoshel Silicon Carbide Crucible was tested successfully.

Crucible Size

Metal Crucible Line Diagram

Stock No. NS6130-10-1018
Purity >99.9% Confirm
Capacity 5ml Confirm
Density 2.0-2.2 g/cm³ Confirm
Melting Point 2730 °C Confirm
Co-eff of Thermal Expansion 4.5 K-1*10-6 Confirm
Rigidity 13 Confirm
Thermal Conductivity 45W/m*k Confirm
Apparent Porosity ≤ 29 % Confirm
Max Service Temp 1780 °C Confirm
Ash 3 % Confirm
Bending Strength 280 MPa Confirm
Compressive Strength ≥2200 MPa Confirm
Specific Resistance 6.0-15.0 μΩ.m Confirm
Main Inspect Verifier Manager QC
Lid Available In All Sizes (Get Quote)

More Silicon Carbide Crucibles Available in Different Sizes

Stock No Capacity (A)
Top Dia
(B)
Bottom Dia
(C)
Height
NS6130-10-1018 (A) 5ml 25mm (0.98in) 15mm (0.59in) 28mm (1.1in)
NS6130-10-1018 (B) 10ml 29mm (1.14in) 18mm (0.71in) 34mm (1.34in)
NS6130-10-1018 (C) 20ml 35mm (1.38in) 24mm (0.94in) 42mm (1.65in)
NS6130-10-1018 (D) 50ml 48mm (1.89in) 30mm (1.18in) 54mm (2.05in)
NS6130-10-1018 (E) 100ml 58mm (2.28in) 35mm (1.38in) 68mm (2.68in)
NS6130-10-1018 (F) 150ml 66mm (2.6in) 40mm (1.57in) 80mm (3.15in)
NS6130-10-1018 (G) 250ml 79mm (3.11in) 42mm (1.65in) 93mm (3.66in)

Experts Review:

Terence Mitchell, PhD,(ICAI School of Engineering Madrid, Spain)

Terence Mitchell, PhD,(ICAI School of Engineering Madrid, Spain)
Silicon Carbide Crucible: 
Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.


Dr. Steven Atkinson,Professor(University of Nottingham,UK)

Dr. Steven Atkinson,Professor(University of Nottingham,UK)
Silicon Carbide Crucible: 
Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).


Dr. Ms. Huian Ruan(Taungoo Technological University, Myanmar)

Dr. Ms. Huian Ruan(Taungoo Technological University, Myanmar)
Silicon Carbide Crucible: 
SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.


Dr. Marco Ferro,MD PhD(University of Nordland Bodø, Norway)

Dr. Marco Ferro,MD PhD(University of Nordland Bodø, Norway)
Silicon Carbide Crucible: 
The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.


Silicon Carbide Crucible

Silicon Carbide Crucible

Silicon Carbide CruciblesContact Us for Silicon Carbide
From us, you can easily purchase Silicon Carbide Crucibles at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com Contact: +1 302 268 6163 (US and Europe), Contact: +91-9779550077 (India). We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.


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NS6130-10-1201 – Silicon Wafer P Type (4 inch, Boron Doped)

NS6130-10-1284 – Silicon Nitride Metal Balls (Si3N4, Purity: 92-95%, Dia: 10 mm)

NS6130-03-344 – Silicon Oxide Nanopowder (SiO2, 99.9%, 20-30nm, Amorphous)

NS6130-02-208 – Nano Silicon Carbide (SiC, beta, 99.9%, <80 nm, Cubic)

NS6130-10-1111 – Phosphorus Doped Silicon Wafer (4 inch, N Type)