Home » Silicon Carbide Fine Powder (SiC, Beta, Sub-Micron, 99.9%, D: <1µm)

NANOPOWDER COMPOUNDS

Stock No. CAS MSDS Specification COA
NS6130-02-206 409-21-2 MSDS pdf Specification pdf COA pdf

Silicon Carbide Fine Powder (SiC, Beta, Sub-Micron, 99.9%, D: <1µm)

Silicon Carbide Fine Powder

Product: Silicon Carbide Fine Powder (SiC, Beta, Sub-Micron, 99.9%, D: <1µm)

Quality Control: Each lot of NANOSHEL Silicon Carbide Fine Powder was tested successfully.

SEM – Silicon Carbide Fine Powder

SEM – Silicon Carbide Fine Powder

Silicon Carbide – Size Analysis

Silicon Carbide – Size Analysis

 
Product Silicon Carbide Fine Powder
Stock No. NS6130-02-206
CAS 409-21-2 Confirm
APS <1µm Confirm
Purity 99.9 % Confirm
Molecular Formula SiC Confirm
Molecular Weight 40.1g/mol Confirm
Form Powder Confirm
Color Gray green/black Confirm
Density 3.99 g/cm³ Confirm
Melting Point 2730°C Confirm
Electrical Resistivity 1 to 4 10x Ω-m Confirm
Poisson's Ratio 0.15 to 0.21 Confirm
Specific Heat 670 to 1180 J/kg-K Confirm
Tensile Strength 210 to 370 MPa (Ultimate) Confirm
Thermal Conductivity 120 to 170 W/m-K Confirm
Thermal Expansion 4.0 to 4.5 µm/m-K Confirm
Young's Modulus 370 to 490 GPa Confirm
Available Quantities 25Gms, 50Gms, 100Gms and Larger Quantities
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%
All Other Metal < 1000ppm

Expert Reviews

Dr. Myron Rubenstein
Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)

Silicon Carbide Fine Powder: Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.


Dr. Huojin Chan
Dr. Huojin Chan,  (University of Science and Technology of China, Hefei, Anhui, China)

Silicon Carbide Fine Powder: Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).


Dr. Ms. Yi Yen Shi
Dr. Ms. Yi Yen Shi,  (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)

Silicon Carbide Fine Powder: SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.


Dr. Bruce Perrault
Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)

Silicon Carbide Fine Powder: The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.


Dr. Hans Roelofs
Dr. Hans Roelofs, Ph.D (National Technical University of Athens, Greece)

Silicon Carbide Fine Powder: In general, SiC has excellent oxidation resistance up to 1650°C. Oxidation resistance, however, depends largely on the amount of open porosity and particle size, which determine the surface area exposed to oxygen. The higher is the surface area the higher is the oxidation rate. Kinetically, SiC is stable in air up to ~1000°C.


Silicon Carbide Fine Powder

Silicon Carbide Fine Powder