Silicon Carbide Nanopowder (SiC, Purity: 99.9%, 80-100nm, Polymorphic)

Silicon Carbide Nanopowder

Product: Silicon Carbide Nanopowder (SiC, Purity: 99.9%, 80-100nm, Polymorphic)

Quality Control: Each lot of NANOSHEL Silicon Carbide Nanopowder was tested successfully.

Silicon Carbide Nanopowder

SEM – Silicon Carbide Nanoparticles

Product Name Silicon Carbide Nanopowder
Stock No. NS6130-12-000384
CAS 409-21-2 Confirm
APS 80-100nm Confirm
Purity 99.9 % Confirm
Molecular Formula SiC Confirm
Crystal Structure Polymorphic Confirm
Color Grayish Green Confirm
Melting Point 2820°C Confirm
True Density 3.216 g/mL Confirm
Available Quantities 25Gms, 50Gms, 100Gms and larger quantities
Main Inspect Verifier Manager QC

Typical Chemical Analysis

SiC Content 99.9%
F.C 0.050 wt%
T.O 0.100 wt%
Cr 0.001 wt%
N 0.001 wt%
S 0.001 wt%
Cu 0.001 wt%
Fe 0.001 wt%
Ni 0.001 wt%
Co 0.001 wt%
Na 0.001 wt%
Al 0.001 wt%
Zn 0.001 wt%
W 0.001 wt%

Experts Review:

58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Silicon Carbide Nanopowder: 
Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.


1252525Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Silicon Carbide Nanopowder: 
Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).


2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Silicon Carbide Nanopowder: 
SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.


10604509_1459864657612760_2405225879143508610_oDr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Silicon Carbide Nanopowder: 
The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.


125448Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
Silicon Carbide Nanopowder: 
In general, SiC has excellent oxidation resistance up to 1650°C. Oxidation resistance, however, depends largely on the amount of open porosity and particle size, which determine the surface area exposed to oxygen. The higher is the surface area the higher is the oxidation rate. Kinetically, SiC is stable in air up to ~1000°C.


Silicon Carbide Nanopowder

Silicon Carbide Nanopowder

Zinc Oxide NanoparticlesContact Us for Silicon Carbide
From us, you can easily purchase Silicon Carbide Nanopowder at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com Contact: +1 302 268 6163 (US and Europe), Contact: +91-9779550077 (India). We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.


More Silicon Products By Nanoshel

NS6130-10-1122 – Silicon Wafer Silicon Dioxide Layer (Diameter: 100 mm, N Type Doped)

NS6130-12-000047 – Tetraethyl Silicate (SiC8H20O4, Purity: 99.9%)

NS6130-05-509 – Silicon Carbide Powder (Purity: >99.9%, APS: 60µm)

NS6130-10-1120 – CZ Silicon Wafers P Type Boron (3 inches, Single Side Polished)

NS6130-10-1282 – Silicon Nitride Balls (Si3N4, Purity: 92-95%, Dia: 1.5 mm)

NS6130-12-000158 – Silicon Nanowire (Si, Purity: >99.9%, Diameter: 40-50nm)

NS6130-10-1200 – N Type Silicon Wafer (4 inch, Phosphorous Doping)

NS6130-10-1159 – Silicon Oxide Mesoporous Nanopowder (SiO2, Purity: 99.9%, Pore Size: 4 nm, APS: 200 nm)

NS6130-10-1057 – Silicon Oxide Sputtering Target (SiO2, Purity: 99.99%, Dia: 50±1mm)

NS6130-03-342 – Hollow Silica Microspheres (SiO2, 99%, 10um, Amorphous)