Silicon Carbide Powder (SiC, Purity: 99%, APS: 40-50µm)

Silicon Carbide Powder

Product: Silicon Carbide Powder (SiC, Purity: 99%, APS: 40-50µm)

Quality Control: Each lot of NANOSHEL Silicon Carbide Powder was tested successfully.

Silicon Carbide Powder

Particles Size Analysis – SiC Powder

Product Name Silicon Carbide Powder
Stock No. NS6130-12-000731
CAS 409-21-2 Confirm
Purity 99 % Confirm
APS 40-50µm Confirm
Molecular Formula SiC Confirm
Morphology Spherical Confirm
Bulk Density 0.05 g/cm³ Confirm
True Density 3.216 g/cm³ Confirm
Available Quantities 25Gms, 50Gms, 100Gms and larger quantities
Main Inspect Verifier Manager QC

Typical Chemical Analysis

F.C 0.050 wt%
T.O 0.100 wt%
Cr 0.001 wt%
Na 0.001 wt%
Al 0.001 wt%
Zn 0.001 wt%
W 0.001 wt%
All Other Metal < 0.1 %

Experts Review:

Dr. Marcus Tägtmeyer (International Medical and Technological University, Dar es Salaam, Tanzania)


Dr. Marcus Tägtmeyer (International Medical and Technological University, Dar es Salaam, Tanzania)
Silicon Carbide Micro Powder: Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.


Dr. Ms Jane Li (National Penghu University of Science and Technology, Magong, Penghu, Republic of China)
Dr. Ms Jane Li (National Penghu University of Science and Technology, Magong, Penghu,  Republic of China)
Silicon Carbide Micro Powder: Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).


Dr. Willem-Jan de Kleijn Ph.D (Luleå University of Technology, Luleå, Sweden)
Dr. Willem-Jan de Kleijn Ph.D (Luleå University of Technology, Luleå, Sweden)
Silicon Carbide Micro Powder: SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.


Dr. JKF Gojukai PhD (Kaiserslautern University of Technology, Kaiserslautern, Rhineland-Palatinate, Germany)
Dr. JKF Gojukai PhD (Kaiserslautern University of Technology, Kaiserslautern, Rhineland-Palatinate, Germany)
Silicon Carbide Micro Powder: The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.


Dr. Huang Fu Ph.D (Maebashi Institute of Technology, Maebashi, Gunma, Japan)
Dr. Huang Fu Ph.D (Maebashi Institute of Technology, Maebashi, Gunma, Japan)
Silicon Carbide Micro Powder:
In general, SiC has excellent oxidation resistance up to 1650°C. Oxidation resistance, however, depends largely on the amount of open porosity and particle size, which determine the surface area exposed to oxygen. The higher is the surface area the higher is the oxidation rate. Kinetically, SiC is stable in air up to ~1000°C.


Silicon Carbide Powders

Silicon Carbide Powders


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