Home » Silicon Dioxide Nanopowder (SiO2, KH550 Coated, 99.9%, 20-30nm)


Stock No. CAS MSDS Specification COA
NS6130-03-346 7631-86-9 MSDS pdf Specification pdf COA pdf

Silicon Dioxide Nanopowder (SiO2, KH550 Coated, 99.9%, 20-30nm)

Silicon Dioxide Nanopowder

Silicon Dioxide Nanopowder (SiO2, KH550 COated, 99.9%, APS: 20-30nm)

Quality Control: Each lot of Silicon Oxide Nanopowder was tested successfully.

SEM-Silicon Dioxide Nanopowder

SEM-Silicon Dioxide Nanopowder

Particles Size of Analysis-SiO2

Particles Size of Analysis-SiO2

Product Silicon Oxide Nanopowder
Stock No NS6130-03-346
CAS 7631-86-9 Confirm
HS Code 28112200 Confirm
Purity 99.9% Confirm
Molecular Formula SiO2 Confirm
Molecular Weight 60.08 g/mol Confirm
Form Powder Confirm
Color White Confirm
Density 2.4 g/cm³ Confirm
Melting Point 1713 °C Confirm
Boiling Point 2950 °C Confirm
Morphology Spherical Confirm
SSA 110-120 m²/g Confirm
Ultraviolet Reflectivity >75%. Confirm
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%
Other Metal 1000ppm

Expert Reviews

Dr. Baron Augustin, Ph.D(TUM)
Dr. Baron Augustin, Ph.D(TUM), (Technical University of Munich, Germany)

Silicon Dioxide Nanopowder: Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.

Dr. Mark Brown
Dr. Mark Brown , (Georgia Institute of Technology in Atlanta,USA)

Silicon Dioxide Nanopowder: Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).

Dr. Ms. Cristiana Barzetti
Dr. Ms. Cristiana Barzetti , (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)

Silicon Dioxide Nanopowder: SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.

Dr. Jang Huang, Ph.D
Dr. Jang Huang, Ph.D , (Shandong Science and Technology University, China)

Silicon Dioxide Nanopowder: The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.

Dr. Darren Chandler, Ph.D
Dr. Darren Chandler, Ph.D, (Manchester Metropolitan University, U.K)

Silicon Dioxide Nanopowder: In general, SiC has excellent oxidation resistance up to 1650°C. Oxidation resistance, however, depends largely on the amount of open porosity and particle size, which determine the surface area exposed to oxygen. The higher is the surface area the higher is the oxidation rate. Kinetically, SiC is stable in air up to ~1000°C.

Silicon Dioxide Nanopowder

Silicon Dioxide Nanopowder