Home » Silicon Nanowires (Si, Purity: >99.9%, Diameter: ~50nm)

NANO WIRES / NANO RODS

Stock No. CAS MSDS Specification COA
NS6130-12-000447 7440-21-3 MSDS pdf Specification pdf COA pdf

Silicon Nanowires (Si, Purity: >99.9%, Diameter: ~50nm)

Silicon Nanowires

Silicon Nanowires (Si, Purity: >99.9%, Diameter: ~50nm)

Quality Control: Each lot of Silicon Nanowires was tested successfully.

Silicon Nanowires SEM/TEM

Silicon Nanowires SEM/TEM

 
Product Silicon Nanowires
Stock No NS6130-12-000447
CAS 7440-21-3 Confirm
Purity >99.9% Confirm
Diameter ~50 nm Confirm
Length up to 200µm Confirm
Molecular Formula Si Confirm
Form Wire Confirm
Color Gray Suspension color Confirm
Concentration 1 - 2 % Confirm
pH 7.9-8.1 Confirm
Coefficient of Variation 51% Confirm
Standard Deviation 10% Confirm
Polymer Content < 0.5% Confirm
Solvet Ethanol, Water, Isopropyl Alcohol
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay >99.9%

Expert Reviews

Jules L. Routbort
Jules L. Routbort, (Argonne National Laboratory, Argonne, USA)

Silicon Nanowires: Nanowires are ultrafine wires or linear arrays of dots, formed by self-assembly. They can be made from wide range of materials. Semiconductor Nanowires made of (silicon, indium phosphide and gallium nitride), insulating Nanowires (sio2,tio2), Molecular Nanowires  either (organic e.g. DNA) or inorganic  Mo6S9−xI), Metallic Nanowires (Ni, Pt, Au) have demonstrated remarkable magnetic, electronic and optical characteristics.


Dr. Ms. Kamiko Chang, Ph.D
Dr. Ms. Kamiko Chang, Ph.D, (University of Science and Technology Beijing, China)

Silicon Nanowires: Nanowires have potential applications in high-density data storage, either as magnetic read heads or as patterned storage media,  and electronic and opto electronic nanodevices, for metallic interconnects of quantum devices and nanodevices.The preparation of these nanowires relies on sophisticated growth techniques, which include self assembly processes, where atoms arrange themselves naturally on stepped surfaces, chemical vapour deposition (CVD) onto patterned substrates, electroplating or molecular beam epitaxy (MBE).


Dr. Nicholaos G. Demas
Dr. Nicholaos G. Demas, (Newcastle University School Of Machanical & Systems Engg. UK)

Silicon Nanowires: One-dimensional structures have been called in different ways: nanowires, nanorod, fibers of fibrils, whiskers, etc. The common characteristic of these structures is that all they have a nanometer size in one of the dimensions, which produces quantum confinement in the material and changes its properties.


Takeo Oku
Takeo Oku, (Department of Materials Science, The University of Shiga Prefecture, Hassaka 2500, Hikone, Shiga 522-8533, Japan)

Silicon Nanowires: Nanowires will be able to greatly reduce the size of electronic devices while allowing to increase the efficiency of those devices. Nanowires can be assembled in a rational and predictable because nanowires chemical composition, length, diameter, doping/electronic properties can be precisely controlled during synthesis.


Dr. Ms. Guixin (Susan), Ph.D
Dr. Ms. Guixin (Susan), Ph.D, (Switzerland-Institute for Inorganic Chemistry, Zurich, Switzerland)

Silicon Nanowires: Nanowires represents the best-defined class of nanoscale building blocks, and this precise control over key variables has correspondingly enabled a wide range of devices and integration strategies to be pursed.


Silicon Nanowires

Silicon Nanowires