High Purity Substrate
Product: Single Crystal Substrate STO (Purity: >99.9%, Size:10*5*0.5mm)
Quality Control: Each lot of NANOSHEL Single Crystal Substrate STO was tested successfully.
|Product Name||Single Crystal Substrate STO|
|Polished||Single Side Polished||Confirm|
|Main Inspect Verifier||Manager QC|
Dr. Clive Patterson Ph.D (Moscow Institute of Physics and Technology, Russia)
Single Crystal Substrate STO has the advantages of high wear-resisting,electric insulation,resistant acid-base, high intensity,high temperature tolerance, high strength , precision process, high mechanical strength, good chemical stability, polishing surface and so on.
Dr. Ms. Teresa B. (University of San Carlos, Philippines)
GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites
Dr. Stew Dean Ph.D (University of Technology Sydney, Australia)
Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.
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