Strontium Titanate Single Crystal Substrate (SrTiO3, Purity: 99.99%, APS: 5*3*0.5mm)

High Purity Strontium Titanate Single Crystal Substrate

Product: Strontium Titanate Single Crystal Substrate (SrTiO3, Purity: 99.99%,APS: 5*3*0.5mm)

Quality Control: Each lot of Strontium Titanate Single Crystal Substrates was tested successfully.

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Strontium Titanate Single Crystal Substrates- SEM

 

Materials Strontium Titanate Single Crystal Substrate
Strontium Titanate Single Crystal Substrates Stock No NS6130-10-1205
Strontium Titanate Single Crystal Substrates CAS 12060-59-2
Strontium Titanate Single Crystal Substrates Purity 99.9%
Strontium Titanate Single Crystal Substrates Length 5mm
Strontium Titanate Single Crystal Substrates Width 3mm
Strontium Titanate Single Crystal Substrates Thickness 0.5mm
Strontium Titanate Single Crystal Substrates Orientation (100) ± 50C
Strontium Titanate Single Crystal Substrates Density 5.175g/cm3
Strontium Titanate Single Crystal Substrates Melting Point 2080oC
Strontium Titanate Single Crystal Substrates Hardness 6 mohs
Strontium Titanate Single Crystal Substrates Thermal Expansion 10.4(*10-6/0C
Strontium Titanate Single Crystal Substrates Dielectric Constant ~300
Strontium Titanate Single Crystal Substrates Loss Tangent at 10GHZ ~5*10-4@300k,~3*10-4@77
Strontium Titanate Single Crystal Substrates Color and Appearance Transparent (Slightly Brown)
Strontium Titanate Single Crystal Substrates Chemical Stability Insoluble in Water
Strontium Titanate Single Crystal Substrates Growth Method Vernuil
Strontium Titanate Single Crystal Substrates Crystal Structure Cubic, a=3.905 A
Strontium Titanate Single Crystal Substrates Polish One Side EPI Polished
Strontium Titanate Single Crystal Substrates Pack Packed in 100 grade Plastic bag

Experts Review:


Dr. Clive Patterson Ph.D (Moscow Institute of Physics and Technology, Russia)
Strontium Titanate Single Crystal Substrate has the advantages of high wear-resisting,electric insulation,resistant acid-base, high intensity,high temperature tolerance, high strength , precision process, high mechanical strength, good chemical stability, polishing surface and so on.


Dr. Ms. Teresa B. (University of San Carlos, Philippines)
GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites


Dr. Stew Dean Ph.D (University of Technology Sydney, Australia)
Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.


Single Crystal Substrates

Strontium Titanate Single Crystal Substrate



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