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Home » Temperature Sensor Quantum Dots (Indium Phosphide/Zinc Sulphide-MPA-COOH Quantum Dots)

SURFACE MODIFIED

Stock No. CAS MSDS Specification COA
NS6130-12-000193 22398-80-7 MSDS pdf Specification pdf COA pdf

Temperature Sensor Quantum Dot

(Indium Phosphide/Zinc Sulphide-MPA-COOH Quantum Dots)

Indium Phosphide/Zinc Sulphide-MPA-COOH Quantum Dots

Indium Phosphide/Zinc Sulphide-MPA-COOH Quantum Dots

 
Product Temperature Sensor Quantum Dot
Stock No. NS6130-12-000192
CAS 22398-80-7 Confirm
Purity 99.9% Confirm
Emission Peak 540±25nm Confirm
Surface Group PEG-NH₂ Confirm
Molecular Formula InP/ZnS Confirm
Solvent Water Confirm
Application Bio-Conjugation with Bio-Molecules Confirm
Quality Control Each lot of was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%
Other Metal 800ppm

Expert Reviews

Dr. Ms. Kamiko Chang, Ph.D(University of Science and Technology Beijing, China)

Colloidal semiconductor quantum dots (QDs) have attracted attention in various fields due to their unique size- and shape-dependent optical and electronic properties. In particular, their light-emitting characteristics in a wide range of wavelengths, i.e., from ultraviolet to near-infrared, makes them a new class of emitters for various technological applications such as biomedical imaging, light-emitting diodes, and  lasers.


Dr. Nicholaos G. Demas, (Newcastle University School Of Machanical & Systems Engg. UK)

As of today, various semiconductors (including the II−VI and III−V families) have been suggested for such uses, and InP QDs can be recognized as important candidates for Cd-free environmentally benign emitters, operating across the entire visible range.


Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)

InP QDs in nanoscale strongly absorb light when the excitation energy is greater than the bandgap energy. Electrons are promoted from the valance to the conduction band. The energy of the quantum confinement peak depends on the size, shape and structure core@shell.The PL emission efficiency of InP/ZNS NCs increases significantly with increasing the synthesis temperature.


Dr. Huojin Chan, (University of Science and Technology of China, Hefei, Anhui, China)

The InP particle size increases with the increase in temperature. This remarkable enhancement in optical properties is due to the successful surface passivation of the InP cores with ZnS shells of wider band gap energy. The ZnS shells structurally passivate the dangling bonds on the surface of the cores and also energetically suppress the leakage of excitons from the cores into the shell because of its wider band gap energy as compared to that of the core.


Dr. Darren Chandler, Ph.D(Manchester Metropolitan University, U.K)

When the surface of InP is passivated byZns,core shell quantum dots is formed and the quantum yield and Photo Lumniscence efficiency is greatly improved compared to that with bare InP.Beside the optical transitions in the InP core, the optical processes within the ZnS shell strongly influence the dynamics of carriers’ population and evolution after photo-generation.


Induim Phosphide /Zinc Sulphide-MPA- COOH Quantum Dots

Induim Phosphide /Zinc Sulphide-MPA- COOH Quantum Dots


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