Home » Tin Oxide Nanopowder (SnO2, Fluorine Doped, 99.9%, 80-100nm)
DOPED POWDER
| Stock No. | CAS | MSDS | Specification | COA |
|---|---|---|---|---|
| NS6130-03-393 | 18282-10-5 |
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Tin Oxide Nanopowder
Product: Tin Oxide Nanopowder (SnO2, Fluorine Doped, 99.9%, 80-100nm)
NS393
SEM - Tin Oxide Nanopowder
Particles Size Analysis - SnO2 Nanoparticles
| Product | Tin Oxide Nanopowder | |
| Stock No | NS6130-03-393 | |
| CAS | 18282-10-5 | Confirm |
| Purity | 99.9% | Confirm |
| APS | 80-100nm | Confirm |
| HS Code | 28419000 | Confirm |
| Molecular Formula | SnO2 | Confirm |
| Molecular Weight | 150.71g/mol | Confirm |
| Doping | Fluorine Doped | Confirm |
| Doping %age | 2-3Wt% | Confirm |
| Form | Powder | Confirm |
| Color | White | Confirm |
| Density | 6.95 g/cm³ | Confirm |
| Melting Point | 1630 °C | Confirm |
| Boiling Point | 1800-1900 °C | Confirm |
| Solubility | Insoluble in water | |
| Quality Control | Each lot of Tin Oxide Nanopowder was tested successfully. | |
| Main Inspect Verifier | Manager QC | |
Typical Chemical Analysis
| Assay | 99.9% |
Expert Reviews
Dr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Tin Oxide Nanopowder: Doping is a powerful and effective way to alter the electronic and optical properties of a semiconductor. Doping is essential in the semiconductor industry since most semiconductors including silicon are essentially insulators without doping at room temperature. The addition of dopant can introduce electronic and structural defects into the pristine nanomaterials that can be advantageous or deleterious.
Dr. Huojin Chan , (University of Science and Technology of China, Hefei, Anhui, China)
Tin Oxide Nanopowder: Doping typically follows a Poisson distribution. The uniform doping is done either by growth or nucleation techniques by decoupling the doping and growth process. In nucleation doping reaction conditions are controlled in such a way along with judicious choice of reactants that a nucleus of dopant can be created and by shell growth of effectively confining the dopant to the center of particle.
Dr. Bruce Perrault, Ph.D , (Georgia Institute of Technology (Georgia Tech), USA)
Tin Oxide Nanopowder: Nano-materials have been recently investigated due to their novel properties that are acquired at the nanometer scale, properties which change with size or shape. Besides the elemental composition and physical structure, as in bulk material or traditional chemistry, the size of the material provides another variable for us to tune the property of material. Moreover, a few dopants in the material can make the properties more adjustable.
Dr. Myron Rubenstein, Ph.D , (Polytechnic University of Turin, Italy)
Tin Oxide Nanopowder: Dopant precursor substantially changes the reaction kinetics. Doped semiconductor nanomaterials are expected to play an important role in nanoelectronics and nanophotonic devices. Doping level of nanostructures will effects the properties and functionality of nanoparticles. Doped semiconductor nanomaterials constitute a unique and important class of nanomaterials with novel properties.
Tin Oxide Nanopowder
From us, you can easily purchase Tin Oxide Nanopowder at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com. We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.
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Dr. Hans Roelofs Ph.D , (National Technical University of Athens, Greece)
Tin Oxide Nanopowder: Doping on nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas. The electronic, optical, photochemical, photo-electrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by adding different elements. The materials can be engineered towards specific applications through careful selection of the dopants.