SILICON CELLULOSE WAFERS

Stock Number Product Name MSDS SPEC COA
NS6130-10-1001 4 inch silicon wafer (N Type, Phosphorous Doping)
NS6130-10-1002 P Type Silicon Wafer (4? Boron Doping)
NS6130-10-1003 3 inch silicon wafer N Type (Phosphorous Doped)
NS6130-10-1004 Silicon Wafer 3 Inch P Type (Boron Doped)
NS6130-10-1081 Silicon Wafer 6 inch (P Type, Boron Doping)
NS6130-10-1082 Silicon Wafers 6? (N Type, Phosphorus Doping)
NS6130-10-1083 Boron Doped Silicon Wafer (2 inch, P Type)
NS6130-10-1084 Phosphorus Doped Silicon Wafer (2 inch, N Type)
NS6130-10-1085 Boron Oxide Doped Silicon Wafer
NS6130-10-1094 Silicon Wafer Undoped (Diameter: 4? [100mm])
NS6130-10-1108 Single Side Polished Silicon Wafer (2 inch, P Type Boron Doping)
NS6130-10-1109 P Type Semiconductor (4 inch, Boron Doping)
NS6130-10-1110 Boron Doped P Type Silicon Wafer (4 inches, Single Side Polished)
NS6130-10-1111 Phosphorus Doped Silicon Wafer (4 inch, N Type)
NS6130-10-1112 Silicon Wafer N Types (4 inches, Boron Doped)
NS6130-10-1120 CZ Silicon Wafers P Type Boron (3 inches, Single Side Polished)
NS6130-10-1121 Heavily Doped Silicon Wafer (2 inches, N Type)
NS6130-10-1122 Silicon Wafer Silicon Dioxide Layer (Diameter: 100 mm, N Type Doped)
NS6130-10-1123 Silicon Germanium Wafers (Ge,Diameter: 50.8 mm, Antimony Doped)
NS6130-10-1124 Germanium Wafer (Ge,Diameter: 50.8 mm, Un-doped)
NS6130-10-1152 Silicon Wafer 4 inch P Type (Platinum/Tantalum/Silicon)
NS6130-10-1156 Silicon Carbide Wafer N Types (2?, Phosphorus Doped)
NS6130-10-1157 Sapphire Wafer C Plane (2 inch, Al2O3)
NS6130-10-1165 Silicon Carbide Wafers N Type (12 inch, Phosphorus Doped)
NS6130-10-1175 DSP Silicon Wafer P Type (2?, Boron Doped)
NS6130-10-1177 Silicon Wafer Gold Coated (4 inches, Single Side Polished)
NS6130-10-1178 Silicon Wafer Silver Coated (4 inches, Single Side Polished)
NS6130-10-1179 Platinum Coated Silicon Wafer (p-Si Wafer Coated with Platinum)
NS6130-10-1183 Silicon Wafer N Type DSP (2?)
NS6130-10-1184 Silicon Wafer N Type SiO2 (4 inches, Single Side Polished)
NS6130-10-1197 Silicon Wafer N Type (4 inch,Single Side Polished )
NS6130-10-1199 P Type Silicon Wafers (4 inch, Boron Doping)
NS6130-10-1200 N Type Silicon Wafer (4 inch, Phosphorous Doping)
NS6130-10-1201 Silicon Wafer P Type (4 inch, Boron Doped)
NS6130-10-1202 Silicon Wafer N Type (4 inch, Phosphorous Doped)
NS6130-10-1204 CZ Silicon Wafer (P Type, Boron Doped,10mm)
NS6130-10-1231 Microcrystalline cellulose (Thickness: 500µm, Diameter: 125mm)
NS6130-10-1264 DSP Silicon Wafer P Type (12?, Boron Doped)
NS6130-10-1276 CVD Graphene on Silicon Wafer (Purity: 99.9%, Size: 1*1 cm, P-Doped)
NS6130-10-1308 SOI Wafer N Type ( Purity: 99.9% Dia: 4”(100mm) CZ Thickness: 450µm)