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Silicon/Cellulose Wafers

Stock Number Product Name MSDS SPEC COA Catalogue
NS6130-10-1001 4 inch silicon wafer (N Type, Phosphorus Doping)
NS6130-10-1002 P Type Silicon Wafer (4” Boron Doping)
NS6130-10-1003 3 inch silicon wafer N Type (Phosphorus Doped)
NS6130-10-1004 Silicon Wafer 3 Inch P Type (Boron Doped)
NS6130-10-1079 Boron Doped Silicon Wafers (Si, Dia: 8”, P Type)
NS6130-10-1080 Phosphorus doped Silicon Wafers (Si, Dia: 8”, N Type)
NS6130-10-1081 Silicon Wafer 6 inch (P Type, Boron Doping)
NS6130-10-1082 Silicon Wafers 6 inch (N Type, Phosphorus Doping)
NS6130-10-1083 Boron Doped Silicon Wafer (2 inch, P Type)
NS6130-10-1084 Phosphorus Doped Silicon Wafer (2 inch, N Type)
NS6130-10-1085 Boron Oxide Doped Silicon Wafer
NS6130-10-1087 Silicon Wafers Undoped (Si, 2", Diameter: 50.8mm, Thickness: 500µm)
NS6130-10-1088 Single Crystal Silicon Wafer Undoped (Si, Diameter: 6”)
NS6130-10-1089 Single Crystal Silicon Wafer (Si, Dia: 200mm ± 0.2mm, Undoped)
NS6130-10-1090 Undoped Silicon Wafer Single Crystal (Si, Dia: 12”, SSP)
NS6130-10-1094 Silicon Wafer Undoped (Diameter: 4" [100mm])
NS6130-10-1108 Single Side Polished Silicon Wafer (2 inch, P Type Boron Doping)
NS6130-10-1109 P Type Semiconductor (4 inch, Boron Doping)
NS6130-10-1110 Boron Doped P Type Silicon Wafer (4 inches, Single Side Polished)
NS6130-10-1111 Phosphorus Doped Silicon Wafer (4 inch, N Type)
NS6130-10-1112 Silicon Wafer N Types (4 inches, Boron Doped)
NS6130-10-1120 CZ Silicon Wafers P Type Boron (3 inches, Single Side Polished)
NS6130-10-1121 Heavily Doped Silicon Wafer (2 inches, N Type)
NS6130-10-1122 Silicon Wafer Silicon Dioxide Layer (Diameter: 100 mm, N Type Doped)
NS6130-10-1124 Germanium Wafer (Ge,Diameter: 50.8 mm, Un-doped)
NS6130-10-1152 Silicon Wafer Platinum Coated (Pt/TaOx on SiO2/Si wafer)
NS6130-10-1156 Silicon Carbide Wafer N Types (2", Nitrogen Doped)
NS6130-10-1157 Sapphire Wafer C Plane (2 inch, Al2O3)
NS6130-10-1165 Silicon Carbide Wafers N Type (12 inch, Phosphorus Doped)
NS6130-10-1175 DSP Silicon Wafer P Type (2", Boron Doped)
NS6130-10-1177 Silicon Wafer Gold Coated (4 inches, Single Side Polished)
NS6130-10-1178 Silicon Wafer Silver Coated (4 inches, Single Side Polished)
NS6130-10-1179 Platinum Coated Silicon Wafer (P-type/Boron doped with thermally grown SiO2 surface)
NS6130-10-1183 Silicon Wafer N Type DSP (2")
NS6130-10-1184 Silicon Wafer N Type SiO2 (4 inches, Single Side Polished)
NS6130-10-1197 Silicon Wafer (Si, Diameter: 4 inches, Doping: P-Type)
NS6130-10-1199 P Type Silicon Wafers (4 inch, Boron Doping)
NS6130-10-1200 N Type Silicon Wafer (4 inch, Phosphorus Doping)
NS6130-10-1201 Silicon Wafer P Type (4 inch, Boron Doped)
NS6130-10-1202 Silicon Wafer N Type (4 inch, Phosphorus Doped)
NS6130-10-1204 CZ Silicon Wafer (P Type, Boron Doped,10mm)
NS6130-10-1231 Microcrystalline cellulose (Thickness: 500µm, Diameter: 125mm)
NS6130-10-1262 Gallium Nitride Wafer (GaN on Sapphire Wafer, Purity: >99.9%, Diameter: 2", Undoped)
NS6130-10-1263 GaN Wafer (Gallium Nitride, Si-Doped, N type, Purity: >99.9%, Diameter: 2")
NS6130-10-1264 DSP Silicon Wafer P Type (12", Boron Doped)
NS6130-10-1276 CVD Graphene on Silicon Wafer (Purity: 99.9%, Size: 1*1 cm, P-Doped)
NS6130-10-1308 SOI Wafer N Type ( Purity: 99.9% Dia: 4”(100mm) CZ Thickness: 450µm)
NS6130-10-1494 Gallium Arsenide Wafer (GaAs, Dia: 150 ± 0.5 mm, P Type)
NS6130-10-1550 Glass Wafers (Purity: 99.9%, Size: 4"Inch (100mm),Thikness: 2mm)
NS6130-12-001332 Germanium Wafers Phosphorus Doped (Ge, Purity: 99.9%, Dia: 4”)
NS6130-12-001333 Germanium Wafers Boron Doped (Ge, Purity: 99.9%, Dia: 4”)