Tin Selenide: Extensive attention has been paid in search of new semiconducting materials for efficient solar energy conversion. Metal chalcogenides offer a wide range of optical band gaps suitable for various optical and optoelectronic applications.
Tin Selenide: also known as stannous selenide, is an inorganic compound with the formula (SnSe), where Tin has a +2 oxidation state. Tin (II) selenide is a narrow band-gap (IV-VI) semiconductor and has received considerable interest for applications including low-cost photovoltaics and memory-switching devices. Tin (II) selenide is a typical layered metal chalcogenide; that is, it includes a Group 16 anion (Se2−) and an electropositive element (Sn2+), and it is arranged in a layered structure.
Tin (II) selenide exhibits low thermal conductivity as well as reasonable electrical conductivity, creating the possibility of it being used in thermoelectric materials. Metal selenides have attracted considerable attention due to their interesting properties and potential applications. Tin Selenide (SnSe), a member of group IV-VI semiconductors is one of the promising materials from its applications point of view. SnSe in bulk crystalline and thin film form has been used as memory switching devices, holographic recording systems, and infrared electronic devices.
The bulk properties of SnSe have been analyzed by several researchers and concluded that it belongs to the class of layered semiconductors. SnSe has direct band gap of about 1.2 eV and indirect band gap 1.30 eV. As SnSe has the energy gap of about 1.0 eV it may be utilized as an efficient material for solar energy conversion. Tin selenide (SnSe) is a p-type semiconductor having a narrow band gap (1–1.1 eV), whose constituent elements are abundant in nature and hence it is worth to investigate the development of this material for photovoltaic applications.
Researchers investigated a number of methods to prepare SnSe thin films and powder via brush plating, electro-deposition, spray pyrolysis, hot wall deposition, chemical vapor deposition, vacuum evaporation, chemical bath deposition, atomic layer deposition, laser ablation and D.C. Magnetron sputtering.
Tin Selenide (SnSe) is a narrow band gap, binary IV–VI semiconductor, suitable for various optoelectronic applications like memory switching devices, photovoltaic, light emitting devices (LED), and holographic recording systems. Tin selenide is a narrow band-gap (IV-VI) semiconductor and has received considerable interest for applications including low-cost photovoltaics and memory-switching devices.
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