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Home » Copper Silicide Powder (Cu5Si, APS: < 200 µm, Purity: 99.9%)

INORGANIC COMPOUNDS

Stock No. CAS MSDS Specification COA Catalogue
NS6130-12-000284 12159-07-8 MSDS pdf Specification pdf COA pdf

Copper Silicide Powder

(Cu5Si, APS: < 200 µm, Purity: 99.9%)

Available Pack Size: 10Gms, 25Gms, 50Gms, 100Gms, 250Gms, 500Gms, 1Kg & Bulk orders
Particles Size of Analysis - Copper Silicide Powder

Particles Size of Analysis - Copper Silicide Powder

 
Product Copper Silicide Powder
Stock No NS6130-12-000284
CAS 12159-07-8 Confirm
Purity 99.9% Confirm
APS < 200 µm Confirm
Molecular Formula Cu5Si Confirm
Molecular Weight 345.8155 g/mol Confirm
Form Powder Confirm
Color Grey Confirm
Melting Point 825 °C Confirm
Solubility in Water Insoluble
Quality Control Each lot of Copper Silicide Powder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%

Expert Reviews

Dr. Marcus Tägtmeyer, , (International Medical and Technological University, Dar es Salaam, Tanzania)

COPPER SILICIDE POWDER has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. Moreover, when Cu is deposited on Si substrate, the interface reactions between Cu and Si contacts have attracted even more interest. However, under thermal annealing, the high reactivity between Cu and Si and its easy diffusion of Cu into Si substrate, make device deteriorated and capability worsened.


Dr. Ms Jane Li, ,  (National Penghu University of Science and Technology, Magong, Penghu,  Republic of China)

COPPER SILICIDE POWDER (Cu5Si), also called pentacopper silicide, is a binary compound of silicon with copper. It is an intermetallic compound, meaning that it has properties intermediate between an ionic compound and an alloy. This a solid crystalline material is a silvery solid that is insoluble in water. Cu has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection.


Dr. Willem-Jan de Kleijn Ph.D, , (Luleå University of Technology, Luleå, Sweden)

COPPER SILICIDE POWDER in particular are an extremely promising materialset which in thin-film form have found uses as Cu ion diff usion barriers and as passivation layers for on chip applications. Cu has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. This a solid crystalline material is a silvery solid that is insoluble in water.


Dr. JKF Gojukai PhD, , (Kaiserslautern University of Technology, Kaiserslautern, Rhineland-Palatinate, Germany)

COPPER SILICIDE POWDER has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. Under thermal annealing, the high reactivity between Cu and Si and its easy diffusion of Cu into Si substrate, make device deteriorated and capability worsened. Copper silicide applications of electronic devices and catalysts. electrical properties of copper silicide precipitates in silicon.


Dr. Huang Fu Ph.D, , (Maebashi Institute of Technology, Maebashi, Gunma, Japan)

COPPER SILICIDE POWDER electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. These properties make Cu a promising candidate as microelectronic interconnection. This a solid crystalline material is a silvery solid that is insoluble in water. Copper silicide (Cu5Si), also called pentacopper silicide, is a binary compound of silicon with copper.


Copper Silicide Powder

Copper Silicide Powder


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