Product | Copper Silicide Powder | |
Stock No | NS6130-12-000284 | |
CAS | 12159-07-8 | Confirm |
Purity | 99.9% | Confirm |
APS | < 200 µm | Confirm |
Molecular Formula | Cu5Si | Confirm |
Molecular Weight | 345.8155 g/mol | Confirm |
Form | Powder | Confirm |
Color | Grey | Confirm |
Melting Point | 825 °C | Confirm |
Solubility in Water | Insoluble | |
Quality Control | Each Lot of was tested successfully | |
Main Inspect Verifier | Manager QC |
Typical Chemical Analysis
Assay | 99.9% |
COPPER SILICIDE POWDER has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. Moreover, when Cu is deposited on Si substrate, the interface reactions between Cu and Si contacts have attracted even more interest. However, under thermal annealing, the high reactivity between Cu and Si and its easy diffusion of Cu into Si substrate, make device deteriorated and capability worsened.
COPPER SILICIDE POWDER (Cu5Si), also called pentacopper silicide, is a binary compound of silicon with copper. It is an intermetallic compound, meaning that it has properties intermediate between an ionic compound and an alloy. This a solid crystalline material is a silvery solid that is insoluble in water. Cu has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection.
COPPER SILICIDE POWDER in particular are an extremely promising materialset which in thin-film form have found uses as Cu ion diff usion barriers and as passivation layers for on chip applications. Cu has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. This a solid crystalline material is a silvery solid that is insoluble in water.
COPPER SILICIDE POWDER has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. Under thermal annealing, the high reactivity between Cu and Si and its easy diffusion of Cu into Si substrate, make device deteriorated and capability worsened. Copper silicide applications of electronic devices and catalysts. electrical properties of copper silicide precipitates in silicon.
COPPER SILICIDE POWDER electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. These properties make Cu a promising candidate as microelectronic interconnection. This a solid crystalline material is a silvery solid that is insoluble in water. Copper silicide (Cu5Si), also called pentacopper silicide, is a binary compound of silicon with copper.
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Copper Silicide Powder (Cu5Si, APS: < 200 µm, Purity: 99.9%)