Home » Copper Silicide Powder (Cu5Si, APS: < 200 µm, Purity: 99.9%)
INORGANIC COMPOUNDS
| Stock No. | CAS | MSDS | Specification | COA | Catalogue |
|---|---|---|---|---|---|
| NS6130-12-000284 | 12159-07-8 |
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Copper Silicide Powder
(Cu5Si, APS: < 200 µm, Purity: 99.9%)
Particles Size of Analysis - Copper Silicide Powder
| Product | Copper Silicide Powder | |
| Stock No | NS6130-12-000284 | |
| CAS | 12159-07-8 | Confirm |
| Purity | 99.9% | Confirm |
| APS | < 200 µm | Confirm |
| Molecular Formula | Cu5Si | Confirm |
| Molecular Weight | 345.8155 g/mol | Confirm |
| Form | Powder | Confirm |
| Color | Grey | Confirm |
| Melting Point | 825 °C | Confirm |
| Solubility in Water | Insoluble | |
| Quality Control | Each lot of Copper Silicide Powder was tested successfully. | |
| Main Inspect Verifier | Manager QC | |
Typical Chemical Analysis
| Assay | 99.9% |
Expert Reviews
Dr. Ms Jane Li, , (National Penghu University of Science and Technology, Magong, Penghu, Republic of China)
COPPER SILICIDE POWDER (Cu5Si), also called pentacopper silicide, is a binary compound of silicon with copper. It is an intermetallic compound, meaning that it has properties intermediate between an ionic compound and an alloy. This a solid crystalline material is a silvery solid that is insoluble in water. Cu has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection.
Dr. Willem-Jan de Kleijn Ph.D, , (Luleå University of Technology, Luleå, Sweden)
COPPER SILICIDE POWDER in particular are an extremely promising materialset which in thin-film form have found uses as Cu ion diff usion barriers and as passivation layers for on chip applications. Cu has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. This a solid crystalline material is a silvery solid that is insoluble in water.
Dr. JKF Gojukai PhD, , (Kaiserslautern University of Technology, Kaiserslautern, Rhineland-Palatinate, Germany)
COPPER SILICIDE POWDER has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. Under thermal annealing, the high reactivity between Cu and Si and its easy diffusion of Cu into Si substrate, make device deteriorated and capability worsened. Copper silicide applications of electronic devices and catalysts. electrical properties of copper silicide precipitates in silicon.
Dr. Huang Fu Ph.D, , (Maebashi Institute of Technology, Maebashi, Gunma, Japan)
COPPER SILICIDE POWDER electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. These properties make Cu a promising candidate as microelectronic interconnection. This a solid crystalline material is a silvery solid that is insoluble in water. Copper silicide (Cu5Si), also called pentacopper silicide, is a binary compound of silicon with copper.
Copper Silicide Powder
From us, you can easily purchase Copper Silicide Powder at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com. We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.
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Dr. Marcus Tägtmeyer, , (International Medical and Technological University, Dar es Salaam, Tanzania)
COPPER SILICIDE POWDER has low electrical resistivity, high and stress migration resistance, and high melting point. These properties make Cu a promising candidate as microelectronic interconnection. Moreover, when Cu is deposited on Si substrate, the interface reactions between Cu and Si contacts have attracted even more interest. However, under thermal annealing, the high reactivity between Cu and Si and its easy diffusion of Cu into Si substrate, make device deteriorated and capability worsened.