Recovered from Covid 19. We are up & running. We are accepting orders now!

Home » Hafnium Boride Nanopowder (HfB2, Purity: 99%, APS: 80-100nm)

ACETATES BORATES

Stock No. CAS MSDS Specification COA
NS6130-12-000402 12007-23-7 Specification pdf COA pdf

High Purity Hafnium Boride Nanopowder

(HfB2, Purity: 99%, APS: 80-100nm)

Available Pack Size: 10Gms, 25Gms, 50Gms, 100Gms, 250Gms, 500Gms, 1Kg & Bulk orders
Hafnium Boride Nanopowder

Hafnium Boride Nanopowder

Reflectance spectra of Hafnium Boride

Reflectance spectra of Hafnium Boride

 
Product Hafnium Boride Nanopowder
Stock No. NS6130-12-000402
CAS 12007-23-7 Confirm
Purity 99% Confirm
APS 80-100 nm Confirm
Molecular Formula HiB2 Confirm
Form Powder Confirm
Color Black Confirm
Density 10.5 g/cm3 Confirm
Melting point 3250 °C Confirm
Morphology Hexagonal Confirm
Available Quantities 25Gms, 50Gms, 100Gms and larger quantities
Quality Control Each lot of Hafnium Boride Nanopowder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%

Expert Reviews

Dr. Baron Augustin, Ph.D (TUM), (Technical University of Munich, Germany)

Transition metal diborides and their coatings offer an excellent combination of high hardness, high chemical stability and high thermal conductivity, thus they are excellent candidates for a wide range of tribological applications. Stoichiometric hafnium diboride films were grown by chemical vapor deposition from a single-source, heteroatom-free precursor Hf(BH4)4 under conditions that afford highly conformal and smooth films. Nanoshel’s hafnium Boride films of thickness ∼0.6 μm deposited on steel substrates were subjected to pin-on-disk wear testing against a counter face disc of AISI 440C martensitic stainless steel.


Dr. Darren Chandler, Ph.D, (Manchester Metropolitan University, U.K)

Nanoshel’s Hafnium Boride has potential applications in microelectronics: it performs well as a diffusion barrier between copper and silicon and it has been investigated as a contact metal and a gate electrode material for Si metal-oxide-semiconductor fieldeffect transistors.


Dr. Ms. Cristiana Barzetti, (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)

Nanoshel’s Hafnium Boride (HfB2), a metallic ceramic material, has a high melting point (3250 °C), excellent chemical resistance, high hardness (bulk value 29 GPa), and high electrical conductivity (bulk value 15 mΩ cm). These properties make it potentially useful for microelectronics and hard coating applications.


Dr. Mark Brown, (Georgia Institute of Technology in Atlanta, USA)

Nanoshel’s Hafnium Boride offers an excellent combination of high bulk hardness (29 GPa), high melting point (3295 °C) and high wear resistance, thus making it an attractive material for wear resistant coatings. In this work, the nanoscale friction response of as-deposited and annealed Hafnium Boride films is reported.


Dr. Jang Huang, Ph.D, (Shandong Science and Technology University, China)

All reactor fission process in controlled by balancing the reactivity in the core. The core it self contains structure materials. Which absorb neutrons and the fission process in influenced by the energy of the neutrons and the effectiveness of the moderation. The control rods contains either a silver/indium/cadmium alloy as in some cases Hafnium, boric acid in used as a dissolved absorbs provide bulk reactivity control.


Hafnium Boride Nanopowder

Hafnium Boride Nanopowder


Note
*Exchanges of materials/products are not permitted. Nanoshel does not offer refunds.
*US Dollar Cheques Not Accepted, Only Bank TT/Credit Cards Accepted