Acetates Borates

Transition metal diborides and their coatings offer an excellent combination of high hardness, high chemical stability and high thermal conductivity, thus they are excellent candidates for a wide range of tribological applications. Stoichiometric hafnium diboride films were grown by chemical vapor deposition from a single-source, heteroatom-free precursor Hf(BH4)4 under conditions that afford highly conformal and smooth films. Nanoshel’s hafnium Boride films of thickness ∼0.6 μm deposited on steel substrates were subjected to pin-on-disk wear testing against a counter face disc of AISI 440C martensitic stainless steel.

Nanoshel’s Hafnium Boride has potential applications in microelectronics: it performs well as a diffusion barrier between copper and silicon and it has been investigated as a contact metal and a gate electrode material for Si metal-oxide-semiconductor fieldeffect transistors.

Nanoshel’s Hafnium Boride (HfB2), a metallic ceramic material, has a high melting point (3250 °C), excellent chemical resistance, high hardness (bulk value 29 GPa), and high electrical conductivity (bulk value 15 mΩ cm). These properties make it potentially useful for microelectronics and hard coating applications.

Nanoshel’s Hafnium Boride offers an excellent combination of high bulk hardness (29 GPa), high melting point (3295 °C) and high wear resistance, thus making it an attractive material for wear resistant coatings. In this work, the nanoscale friction response of as-deposited and annealed Hafnium Boride films is reported.

All reactor fission process in controlled by balancing the reactivity in the core. The core it self contains structure materials. Which absorb neutrons and the fission process in influenced by the energy of the neutrons and the effectiveness of the moderation. The control rods contains either a silver/indium/cadmium alloy as in some cases Hafnium, boric acid in used as a dissolved absorbs provide bulk reactivity control.