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Home » Indium Arsenide Nanopowder (InAs, Purity: 99.99%)

ARSENIDES

Stock No. CAS MSDS Specification COA
NS6130-12-000343 106097-59-0 MSDS pdf Specification pdf COA pdf

Indium Arsenide Nanopowder

(InAs, Purity: 99.99%)

TEM - Indium Arsenide Nanopowder

TEM - Indium Arsenide Nanopowder

Particles Size Analysis - Indium Arsenide Nanopowder

Particles Size Analysis - Indium Arsenide Nanopowder

 
Product Indium Arsenide Nanopowder
Stock No. NS6130-12-000343
CAS 1303-11-3 Confirm
Purity 99.99% Confirm
APS 80-100nm Confirm
Molecular Formula InAs Confirm
Molecular Weight 189.740g/mol Confirm
Form Powder Confirm
color Gray Confirm
Density 5.67g/cm3 Confirm
Melting Point 942°C Confirm
Refractive Index 3.51 Confirm
Dielectric Constant 15.15 Confirm
Electrton Mobility 40000(cm2/(V*s)) Confirm
Storage Normal Room Temperature Confirm
Thermal Conductivity 0.27(300K (W/cm•K)) Confirm
Specific Heat Capacity 47.8 J•mol-1•K-1 Confirm
Solubility in water Insoluble in water
Quality Control Each lot of Indium Arsenide Nanopowder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.99%
Indium 52 %
Arsenic 48 %

Expert Reviews

Dr. Baron Augustin, Ph.D (TUM)(Technical University of Munich, Germany)

Indium Arsenide Nanopowder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.Indium Arsenide Nanopowder is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.


Dr. Darren Chandler, Ph.D (Manchester Metropolitan University, U.K)

Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of Indium Arsenide Nanopowder on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.


Dr. Ms. Cristiana Barzetti, (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)

Gallium arsenide (GaAs), Indium Arsenide Nanopowder (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.


Dr. Jang Huang, Ph.D (Shandong Science and Technology University, China)

Indium Arsenide Nanopowder is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.


Dr. Mark Brown, (Georgia Institute of Technology in Atlanta,USA)

Indium Arsenide Nanopowder (InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.


Indium Arsenide Nanopowder

Indium Arsenide Nanopowder


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