Home » Indium Arsenide Nanopowder (InAs, Purity: 99.99%)
ARSENIDES
| Stock No. | CAS | MSDS | Specification | COA |
|---|---|---|---|---|
| NS6130-12-000343 | 106097-59-0 |
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Indium Arsenide Nanopowder
Indium Arsenide Nanopowder (InAs, Purity: 99.99%)
NS000343
TEM - Indium Arsenide Nanopowder
Particles Size Analysis - Indium Arsenide Nanopowder
| Product | Indium Arsenide Nanopowder | |
| Stock No. | NS6130-12-000343 | |
| CAS | 1303-11-3 | Confirm |
| Purity | 99.99% | Confirm |
| APS | 80-100nm | Confirm |
| Molecular Formula | InAs | Confirm |
| Molecular Weight | 189.740g/mol | Confirm |
| Form | Powder | Confirm |
| color | Gray | Confirm |
| Density | 5.67g/cm3 | Confirm |
| Melting Point | 942°C | Confirm |
| Refractive Index | 3.51 | Confirm |
| Dielectric Constant | 15.15 | Confirm |
| Electrton Mobility | 40000(cm2/(V*s)) | Confirm |
| Storage | Normal Room Temperature | Confirm |
| Thermal Conductivity | 0.27(300K (W/cm•K)) | Confirm |
| Specific Heat Capacity | 47.8 J•mol-1•K-1 | Confirm |
| Solubility in water | Insoluble in water | |
| Quality Control | Each lot of Indium Arsenide Nanopowder was tested successfully. | |
| Main Inspect Verifier | Manager QC | |
Typical Chemical Analysis
| Assay | 99.99% |
| Indium | 52 % |
| Arsenic | 48 % |
Expert Reviews
Dr. Darren Chandler, Ph.D (Manchester Metropolitan University, U.K)
Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of Indium Arsenide Nanopowder on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.
Dr. Ms. Cristiana Barzetti, (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)
Gallium arsenide (GaAs), Indium Arsenide Nanopowder (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
Dr. Jang Huang, Ph.D (Shandong Science and Technology University, China)
Indium Arsenide Nanopowder is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.
Dr. Mark Brown, (Georgia Institute of Technology in Atlanta,USA)
Indium Arsenide Nanopowder (InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.
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Indium Arsenide Nanopowder
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Dr. Baron Augustin, Ph.D (TUM)(Technical University of Munich, Germany)
Indium Arsenide Nanopowder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.Indium Arsenide Nanopowder is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.