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Arsenides

Stock No.
NS6130-12-000343
CAS
106097-59-0
MSDS
MSDS-PDF
Specifications
SPEC-PDF
COA
COA-PDF
Catalogue

Indium Arsenide Nanopowder

(InAs, Purity: 99.99%)
Indium Arsenide Nanopowder
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TEM - Indium Arsenide Nanopowder
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Particles Size Analysis - Indium Arsenide Nanopowder
ProductIndium Arsenide Nanopowder
Stock No.NS6130-12-000343
CAS1303-11-3Confirm
Purity99.99%Confirm
APS80-100nm Confirm
Molecular FormulaInAsConfirm
Molecular Weight189.740g/molConfirm
FormPowderConfirm
colorGrayConfirm
Density5.67g/cm3Confirm
Melting Point942°CConfirm
Refractive Index 3.51 Confirm
Dielectric Constant15.15Confirm
Electrton Mobility 40000(cm2/(V*s))Confirm
StorageNormal Room TemperatureConfirm
Thermal Conductivity0.27(300K (W/cm•K))Confirm
Specific Heat Capacity 47.8 J•mol-1•K-1Confirm
Solubility in waterInsoluble in water
Quality ControlEach Lot of Indium Arsenide Nanopowder was tested successfully
Main Inspect VerifierManager QC

Typical Chemical Analysis

Assay99.99%
Indium52 %
Arsenic48 %

Expert Reviews

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Dr. Baron Augustin Ph.D (TUM)(Technical University of Munich, Germany)

Indium Arsenide Nanopowder is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.Indium Arsenide Nanopowder is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices.

product-expert-image
Dr. Darren Chandler Ph.D (Manchester Metropolitan University, U.K)

Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region. In recent times, there has been an increased interest in the epitaxial growth of Indium Arsenide Nanopowder on commonly available substrate materials such as Si, GaAs. The density of the threading dislocations was reported relatively low.

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Dr. Ms. Cristiana Barzetti (University of Cagliari-Department of Chemical Engineering and Material Science, Italy)

Gallium arsenide (GaAs), Indium Arsenide Nanopowder (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.

product-expert-image
Dr. Jang Huang Ph.D (Shandong Science and Technology University, China)

Indium Arsenide Nanopowder is also used for making of diode lasers. Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Semiconductor nanowires (NWs) are adaptable building blocks for the next generation of electronic and photonic devices. Indium Arsenide Nanopowder is an attractive semiconductor for application to high-speed electronic devices and optoelectronic devices in the infrared region.

product-expert-image
Dr. Mark Brown (Georgia Institute of Technology in Atlanta,USA)

Indium Arsenide Nanopowder (InAs) or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes.

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Indium Arsenide Nanopowder

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