Gallium Nitride Substrate

Gallium Nitride Substrate

Product: Gallium Nitride Substrate (Purity: 99.5%)

Quality Control: Each lot of NANOSHEL Gallium Nitride Substrate was tested successfully.

Product Name Gallium Nitride Substrate
Product Code NS6130-10-1104 Confirm
Purity >99.5% Confirm
Color Transparent Confirm
Shape Crystal slices Confirm
Conduction Type N-type Confirm
Size “(50.8)+/-1mm Confirm
Thickness 260+/-20um Confirm
Orientation C-axis(0001)+/-0.5o Confirm
Primary Flat Location (1-100)+/-0.5o Confirm
Primary Flat Length 16+/-1mm Confirm
Secondary Flat Location (11-20)+/-3o Confirm
Secondary Flat Length 8+/-1mm Confirm
Resistivity(300K) <0.5Ω·cm Confirm
Dislocation Density <5×106cm-2 Confirm
Marco Defect Density <=2cm-2 Confirm
Surface Finish Ra<0.2nm Confirm
Main Inspect Verifier Manager QC

Experts Review:


Dr. Clive Patterson Ph.D (Moscow Institute of Physics and Technology, Russia)
Gallium Nitride Substrate has the advantages of high wear-resisting,electric insulation,resistant acid-base, high intensity,high temperature tolerance, high strength , precision process, high mechanical strength, good chemical stability, polishing surface and so on.


Dr. Ms. Teresa B. (University of San Carlos, Philippines)
GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites


Dr. Stew Dean Ph.D (University of Technology Sydney, Australia)
Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.


Gallium Nitride Substrate

Gallium Nitride Substrate

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Contact Us for Gallium Nitride Substrate 
From us, you can easily purchase Gallium Nitride Substrate at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at sales@nanoshel.com Contact: +1 302 268 6163 (US and Europe), Contact: +91-9779550077 (India). We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.


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