Home » Gallium Nitride Substrate (Purity: 99.5%)

SINGLE CRYSTAL SUBSTRATES

Stock No. CAS MSDS Specification COA
NS6130-10-1104 25617-97-4 Specification pdf COA pdf

Gallium Nitride Substrate (Purity: 99.5%)

Gallium Nitride Substrate

Product : Gallium Nitride Substrate (Purity: 99.5%)

Quality Control: Each lot of Gallium Nitride Substrate was tested successfully.

 
Product Gallium Nitride Substrate
Stock No NS6130-10-1104
CAS 25617-97-4 Confirm
Purity >99.5% Confirm
Size “(50.8)+/-1mm Confirm
Thickness 260+/-20um Confirm
Color Transparent Confirm
Shape Crystal slices Confirm
Conduction Type N-type Confirm
Orientation C-axis(0001)+/-0.5o Confirm
Primary Flat Location (1-100)+/-0.5o Confirm
Primary Flat Length 16+/-1mm Confirm
Secondary Flat Location (11-20)+/-3o Confirm
Secondary Flat Length 8+/-1mm Confirm
Resistivity(300K) <0.5Ω•cm Confirm
Dislocation Density <5×106cm-2 Confirm
Marco Defect Density <=2cm-2 Confirm
Surface Finish Ra <0.2nm Confirm
Main Inspect Verifier Manager QC

Expert Reviews

Dr. Clive Patterson Ph.D , (Moscow Institute of Physics and Technology, Russia)

A single Crystal is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no grain boundaries. The absence of the defects associated with grain boundaries can give single crystals unique properties, particularly optical, electrical, and mechanical. These properties, in addition to making them precious in some gems, are industrially used in technological applications, specially in optics and electronics.


Dr. Ms. Teresa B. , (University of San Carlos, Philippines)

Single Crystal substrates has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressures, thermal stock and water or soil erosion. It is chemically inert with a low friction coefficient and excellent electrical, optical and dielectric characteristics.


Dr. Stew Dean Ph.D , (University of Technology Sydney, Australia)

Single crystal substrateshas been widely used as substrate material for the deposition of high quality oxide thin films, including semiconducting, superconducting, dielectric, ferroelectric, and ferromagnetic oxides. The quality of the oxide films is strongly correlated to the quality of the substrate.


Dr. Ms. Yi Yen Shi,, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)

The anistropicproperties of crystals depends on the orientation of crystals and lead to a wide range of applications in research and development. Crystal substrates has hexagonal/rhombohedral structure. For epitaxial growth of films, different orientations will offer a range of lattice constants to match the epi material.


Dr. Myron Rubenstein,, Ph.D (Polytechnic University of Turin, Italy)

Single crystal substrates are of three types: C-plane, A-plane, R-plane.

C-plane substrates are used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes. A-plane substrate provide a uniform dielectric constant and high insulation for hybrid microelectronics applications. R-plane substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.


Gallium Nitride Substrate

Gallium Nitride Substrate