Gallium Nitride Substrates (Purity: >99.9%, Diameter: 4″, Undoped)

Gallium Nitride Substrates

Product: Gallium Nitride Substrates (Purity: >99.9%, Diameter: 4″, Undoped)

Quality Control: Each lot of NANOSHEL Gallium Nitride Substrates wafer was tested successfully.

Product Name Gallium Nitride Substrates
Product Code NS6130-10-1264 Confirm
CAS No 25617-97-4 Confirm
Purity >99.9% Confirm
Diameter 4″ Confirm
Doping Undoped Confirm
Thickness 4 µm ± 1µm Confirm
Orientation C-axis (001) ±1.0o Confirm
Resistivity (300K) <0.5 Ωcm Confirm
Dislocation Density <1×10^8 cm¯2 Confirm
Substrate Structure GaN on Sapphire (0001) Confirm
Polished Single Side Polished Confirm
EPI Reddy with Atomic Steps Confirm
Carrier Concenteration E16 – E17 Confirm
Conclusion The specifications Confirm with enterprise standard
Main Inspect Verifier Manager QC

Experts Review:


Dr. Clive Patterson Ph.D (Moscow Institute of Physics and Technology, Russia)
Sputtering is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes. The process is repeatable and can be scaled up from small research and development projects, to production batches involving medium to large substrate areas.


Dr. Ms. Teresa B. (University of San Carlos, Philippines)
High-purity metals for the best results We have the flexibility to produce targets in shapes and sizes, and we never compromise in the purity of our raw materials. Our finished and semi-finished targets and our anodes are all made from the very highest purity of different metals.


Dr. Stew Dean Ph.D (University of Technology Sydney, Australia)
Particulate contamination of thin films is a concern in many industries, including semiconductor manufacturing. Particulates are formed either in the gas phase of the plasma or by flaking off deposited films from wall surfaces. They then become negatively charged and electrostatically trapped in a plasma, where they can increase in size. When the plasma is turned off, or even sooner than that, they can fall onto or be transported otherwise to the substrate. With 0.18 mm feature sizes on a semiconductor wafer, a particle of diameter of 90 nm may result in a killer defect. Particles of this size, and some much larger, are known to grow in plasma processing discharges, including sputtering sources.


Gallium Nitride Substrates

Gallium Nitride Substrates



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METAL NANOPOWDERS, COMPOUND NANOPOWDERS, OXIDE NANOPOWDERS, ALLOY NANOPOWDERS, CLAY NANOPOWDERS, GRAPHENE NANOPOWDERS, METAL NANOWIRES & NANORODS, DOPED NANOPOWDERS, SINGLE WALL CNT, MULTI WALL CNT, DOUBLE WALL CNT, FUNCTIONALIZED SWCNT, FUNCTIONALIZED MWCNT, INDUSTRIAL MWCNT, CARBON NANOTUBE ARRAY, METAL NANO DISPERSIONS, OXIDE NANO DISPERSIONS, CNT GRAPHENE DISPERSION, BIO NANO CONJUGATE SERVISES, POSS, CORE SHELL NANOPARTICLES, ZnSE/ZnS QUANTUM DOTS, InP/ZnS QUANTUM DOTS, CdS/ZnS QUANTUM DOTS, CdSe/ZnS QUANTUM DOTS, UPCONVERTING NANOPARTICLES, PbS QUANTUM DOTS