Home » Monocrystalline Silicon Nanopowder (Si, >99%, <80 nm)


Stock No. CAS MSDS Specification COA
NS6130-01-142 7440-21-3 MSDS pdf Specification pdf COA pdf

Monocrystalline Silicon Nanopowder (Si, >99%, <80 nm)

Monocrystalline Silicon Nanopowder

Product: Monocrystalline Silicon Nanopowder (Si, >99%, <80 nm)

Quality Control: Each lot of NANOSHEL Monocrystalline Silicon Nanopowder was tested successfully.

TEM - Silicon Nanopowder

TEM - Silicon Nanopowder

Particles Size Analysis - Si Nanopowder

Particles Size Analysis - Si Nanopowder

Product Name Monocrystalline Silicon Nanopowder
Stock No NS6130-01-142
CAS 7440-21-3 Confirm
APS < 80 nm Confirm
Purity >99 % Confirm
Molecular Formula Si Confirm
Molecular Weight 28.085 g/mol Confirm
Form Powder Confirm
Color Yellow/Brown Confirm
Density 2.329 g/cm³ Confirm
Melting Point 1414 °C Confirm
Boiling Point 2355 °C Confirm
Thermal Expansion 2.6 µm•m-1•K-1 Confirm
Young's Modulus 51-80 GPa Confirm
Poisson's Ratio 0.064 - 0.28 Confirm
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay >99%
Other Metal 5000ppm

Expert Reviews

Jules L. Routbort
Jules L. Routbort, (Argonne National Laboratory, Argonne, USA)

Monocrystalline Silicon: Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.

Dr. Ms. Kamiko Chang, Ph.D
Dr. Ms. Kamiko Chang, Ph.D, (University of Science and Technology Beijing, China)

Monocrystalline Silicon: Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).

Dr. Nicholaos G. Demas
Dr. Nicholaos G. Demas, (Newcastle University School Of Machanical & Systems Engg. UK)

Monocrystalline Silicon: SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.

Takeo Oku
Takeo Oku, (Department of Materials Science, The University of Shiga Prefecture, Hassaka 2500, Hikone, Shiga 522-8533, Japan)

Monocrystalline Silicon: The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.

Dr. Ms. Guixin (Susan), Ph.D
Dr. Ms. Guixin (Susan), Ph.D, (Switzerland-Institute for Inorganic Chemistry, Zurich, Switzerland)

Monocrystalline Silicon: In general, SiC has excellent oxidation resistance up to 1650°C. Oxidation resistance, however, depends largely on the amount of open porosity and particle size, which determine the surface area exposed to oxygen. The higher is the surface area the higher is the oxidation rate. Kinetically, SiC is stable in air up to ~1000°C.

Monocrystalline Silicon Powder

Monocrystalline Silicon Powder