Quantum Dot Diode Laser (Cadmium Selenide/Zinc Sulphide-PEG-NH₂ Quantum Dots)
Product: Quantum Dot Diode Laser
We provide high quality Quantum Dot Diode Laser (GA) ZnSe/ZnS, CdS/ZnS, CdSe/ZnS, InP/ZnS, InP/ZnS,and PbS QDs.
|Product Name||Cadmium Selenide/Zinc Sulphide-PEG-NH₂ Quantum Dots|
|Application||Bio-Conjugation with Bio-Molecules|
|Main Inspect Verifier||Manager QC|
Dr. Ms. Kamiko Chang, Ph.D(University of Science and Technology Beijing, China)
Quantum Dot Diode Laser are the key component for a large number of technologies, among them fiber based communication, digital data storage, printing, material processing and display technology. Due to their high brightness, large efficiency, reliability, small foot print and low price they have superseded conventional light sources and light emitting diodes and enabled new applications.
Dr. Nicholaos G. Demas (Newcastle University School Of Machanical & Systems Engg. UK)
Quantum Dot Diode Laser is one of the most important inventions of the 20th century. Since their invention in the early 1960s, semiconductor lasers have been among the most extensively used lasers. Nowadays, semiconductor lasers appear in various areas of our daily life. They present a critical component in optical communication systems and in many commercial products, such as compact disk players, laser printers, and pointers.
Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
The practical use of Quantum Dot Diode Laser was made possible only after the room temperature continuous-wave operation using a double heterostructure. A room temperature continuous-wave threshold current density as low as 1.6 kA/cm2 was achieved. A significant reduction of jth in a double heterostructure laser is mainly due to two reasons: 1) a wider band gap of the cladding layers effectively confines the carriers in the active region, and 2) a higher refractive index of the active layer compared to that of the cladding layers forms a waveguide and effectively confines the emitted light within the active layer.
Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Quantum Dot Diode Laser semiconductor lasers have demonstrated desirable properties when compared with traditional quantum well (QW) based lasers such as ultralow threshold current density and reduced temperature sensitivity. Typically multiple layers of QDs must be stacked in order to provide enough gain to overcome cavity losses and achieve laser threshold. Due to strain fields created by the first QD layer, the QDs in subsequently grown layers tend to selfalign with QDs in the first layer, resulting in vertical electronic coupling of the QD layers for small spacer layer thicknesses.
Dr. Darren Chandler, Ph.D(Manchester Metropolitan University, U.K)
The most common technique for Quantum Dot Diode Laser growth is the selfassembly technique, in which QDs form as a result of the large strain which exists between the QD material and substrate material. This technique has the advantage of producing QDs of high optical quality. However, the self-assembly technique results in QDs with random positions and a broad size distribution which increases inhomogeneous broadening, decreases peak gain, and increases threshold current density when incorporated into a laser structure.
Please feel free to send us your requirement about our products
+1 646 470 4911 (US)
+36 30 4750555 (EU)