SOI Wafer N Type ( Purity: 99.9% Dia: 4”(100mm) CZ Thickness: 450µm)

SOI Wafer N Type

Product: SOI Wafer N Type (Purity: 99.9% Dia: 4”(100mm) CZ Thickness: 450µm)

Quality Control: Each lot of NANOSHEL SOI Wafer N Type was tested successfully.

Product Name SOI Wafer 4” N Type
Stock No. NS6130-10-1308
CAS 7440-21-3 Confirm
Diameter 4” (100mm)CZ Confirm
Thickness 450µm Confirm
Purity 99.9% Confirm
Molecular Formula Si Confirm
Molecular Weight 28.09g/mol Confirm
Form Wafer Confirm
Color Silver Confirm
Density 2.3g/cm3 Confirm
Front Surface Polished Confirm
Back Surface Etched Confirm
Type n- Type Confirm
Doping Phosphorus Confirm
Resistivity 0-100Ωcm Confirm
Main Inspect Verifier Manager QC

 Experts Review:

Dr. Henrik Jensen,Ph.D (Middle East Technical University Ankara, Turkey)
Silicon wafers are key component in integrated circuits. Integrated circuits are, simply put a composite of various electronic components that are arranged to perform a specific function. Silicon is the principle platform for semiconductor devices.  A wafer is a thin slice of the semiconductor material, which serves as the substrate for microelectronic devices built in and over the wafer.


Dr. Chiyoko Hayashi (Osaka University Suita, Japan)
As silicon wafer’s primary use is in integrated circuits. Integrated circuits power many of devices that can be used by society everyday. Computers and smartphones are just two of the devices that are dependent on this technology. Silicon is the stable among all the semiconductors. Other uses include sensors, such as the tire pressure sensor system and solar cells. Silicon wafers absorbs the photons in sunlight and this in turn create electricity.



Dr. Joris Smits, Ph.D (Wrocław University of Technology, Poland)
The wafers serves as the substrates for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials and photolithographic pattering.



Dr. Ms. Sally Adams (National Technical University of Athens)
Silicon wafers are available in a variety of diameters from 25.4mm (1 inch) to 300mm. The diameter has gradually increased to improve throughput and reduce cost with the current  state –of-the-art of fab considered to be 300mm with the next standard projected to be 450mm.



Dr. Peter Bruggmann (Technical University of Madrid, Spain)
Wafer thickness is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystals having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depths depend on the wafer’s crystal orientation, since each direction offers distinct paths for transport.


SOI Wafer N Type

Silicon Wafer N Type:


Contact Us:

Please feel free to send us your requirement about our products
sales@nanoshel.com
 contact@nanoshel.com
+1 646 470 4911 (US)
+36 30 4750555 (EU)
+91-9779880077 (India)


Nanoshel’s Most Moving Products:

NS6130-01-101 – Silver (Ag) Nanoparticles / Nanopowder (Ag, 99.99%, 80-100 nm, metal basis)

NS6130-01-105 – Aluminium Nanoparticles/Nanopowder (Al, 99.9%, APS: 100nm, Metal basis)

NS6130-01-128 – Copper Nanoparticles/Nanopowder (Cu, Purity: 99.9%, APS: 80-100nm, Metal Basis)

NS6130-01-108 – Gold (Au) Nanopowder (Au, 99.99+%, 50-100 nm)

NS6130-02-219 – Antimony Tin Oxide Nanoparticles (ATO, SnO2:Sb2O3=90:10, 99.8%, 30nm)

NS6130-03-301 – Aluminium Oxide Nanopowder (Al2O3, 99.99%, <100nm)

NS6130-03-341 – Silicon Oxide Nanopowder (SiO2, S-type, Purity: 99.9%, APS: 15-20nm)

NS6130-03-350 – Titanium Oxide Nanopowder (TiO2, Anatase, 99.9%, 10-25nm)

NS6130-10-1002 – P Type Silicon Wafer (4″ Boron Doping)

NS6130-03-341 – SiO2 Nanoparticles (Silicon Dioxide, 15-20nm, 99.9%, S-type)

NS6130-10-1007 – Metallic Copper Foamposite (Cu, PPI-50PPI, Thickness; 2mm)

NS6130-10-1052 – Titanium Sputtering Target (Ti, Purity: 99.99%)

NS6130-10-1214 – Aluminium Metal Foam (Al, Closed Cell, 2-11mm)

NS6130-10-1233 – Screen Printed Electrodes (3-electrodes)

NS6130-06-640 – Pristine MWCNT (99%, OD:10-20nm, Length:3-8μm)

NS6130-06-601 – Single Walled Carbon Nanotubes (>98wt% OD:1-2nm, Length:3-8µm, High Purity)

NS6130-06-680 – Industrial Grade Carbon Nanotubes in bulk quantities

NS6130-06-659 – COOH Functionalized CNT (Carbon Nanotubes, OD: 10-20nm, Length: 3-8µm)

NS6130-03-364 – Single Layer Graphene (C, >50%, Thickness 0.5-6nm, Lateral Size 1-10µm)

NS6130-03-365 – Multilayer Graphene (C, 4-6 Layer Flakes, >80%, 1-10µm)

NS6130-06-659 – COOH Functionalized CNT (Carbon Nanotubes, OD: 10-20nm, Length: 3-8µm)

NS6130-09-907 – Montmorillonite (Natural montmorillonite Modified, >99%, <80nm)