Silicon Carbide Whiskers (SiC, Beta, D: <1.5 µm, L/D: ≥15, 99.9%)

Silicon Carbide Whiskers

Product: Silicon Carbide Whiskers (SiC, Beta, D: <1.5 µm, L/D: ≥15, 99.9%)

Quality Control: Each lot of NANOSHEL Silicon Carbide Whiskers was tested successfully.

SiC Whisker

SEM – Silicon Carbide Whiskers

SiC Whiskers

Silicon Carbide Whiskers – Size Analysis

Material Silicon Carbide whiskers
Stock No NS6130-02-205
CAS 409-21-2 Confirm
Hardness 9.5 Mohs Confirm
Purity 99.9% Confirm
D <1.5 µm Confirm
L/D ≥15 Confirm
Crystal Type Beta Confirm
Free Carbon <0.03% Confirm
Decomposition Temperature 2973k Confirm
Decomposition Temperature 2973k Confirm
Thermal Expansion Coefficient 6.58×10-6 at 373k Confirm
Thermal Expansion Coefficient 2.98×10-6 at 1173k Confirm
Compressibility Coefficient 0.21×10-6 Confirm
Density (288k) 3.216 g/cm³ Confirm
Heating Power 30.343 KJ/mol Confirm
Available Quantities 25Gms, 50Gms, 100Gms and larger quantities
Main Inspect Verifier Manager QC
Typical Chemical Analysis

Assay 99.9 %
SiO2 0.2wt%
Fe <600ppm
Ni <1600ppm
Ca <800ppm
Cr <800ppm
C <0.03%

Experts Review:

58496396Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)
Silicon Carbide Whiskers: Silicon carbide (SiC) is composed of tetrahedral (structure) of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength gives this material exceptional thermal shock resistant qualities.

1252525Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)
Silicon Carbide Whiskers: Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).

2536582Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)
Silicon Carbide Whiskers: SiC whiskers, which are nearly single crystals, are produced (grown) using different methods, including the heating of coked rice hulls, reaction of silanes, reaction of silica and carbon, and the sublimation of SiC powder. In some cases a third element used as a catalyst, such as iron, is added to the reacting materials to facilitate the precipitation of the SiC crystals. In this arrangement, the mechanism for the SiC whisker growth is called the vapor liquid-solid (VLS) mechanism. SiC whiskers are in the order of microns in diameter and grow several hundred microns in length.

10604509_1459864657612760_2405225879143508610_oDr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)
Silicon Carbide Whiskers: The ability of Silicon Carbide to withstand very high temperatures without breaking or distorting is used in the manufacture of ceramic brake discs for sports cars. It is also used in bulletproof vests as an armor material and as a seal ring material for pump shaft sealing where it frequently runs at high speed in contact with a similar silicon carbide seal. One of the major advantages in these applications being the high thermal conductivity of Silicon Carbide which is able to dissipate the frictional heat generated at a rubbing interface.

125448Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)
Silicon Carbide Whiskers:
In general, SiC has excellent oxidation resistance up to 1650°C. Oxidation resistance, however, depends largely on the amount of open porosity and particle size, which determine the surface area exposed to oxygen. The higher is the surface area the higher is the oxidation rate. Kinetically, SiC is stable in air up to ~1000°C.

Silicon Carbide Whiskers

Silicon Carbide Whiskers

Silicon Carbide WhiskersContact Us for Silicon Carbide
From us, you can easily purchase Silicon Carbide Whiskers at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at Contact: +1 302 268 6163 (US and Europe), Contact: +91-9779550077 (India). We invite you to contact us for further information about our company and our capabilities. At Nanoshel, we could be glad to be of service to you. We look forward to your suggestions and feedback.

More Silicon Products By Nanoshel

NS6130-02-210 – Silicon Nitride Nanoparticles (Si3N4, 99.9%, 15-30nm, Amorphous)

NS6130-10-1264 – DSP Silicon Wafer P Type (12″, Boron Doped)

NS6130-04-429 – Silica Nanoparticles Dispersion (SiO2, Purity: 99.9%, APS: 50-80nm)

NS6130-10-1165 – Silicon Carbide Wafers N Type (12 inch, Phosphorus Doped)

NS6130-12-000068 – Activated Silica Powder (SiO2, Purity: 99.9%)

NS6130-10-1094 – Silicon Wafer Undoped (2 inch, P Type)

NS6130-02-281 – Nano Silicon Carbide Powder (SiC, Beta, 99.9%, APS: <90nm)

NS6130-10-1002 – P Type Silicon Wafer (4″ Boron Doping)

NS6130-10-1123 – Silicon Germanium Wafers (SiGe, Diameter: 50.8 mm, Antimony Doped)

NS6130-10-1175 – DSP Silicon Wafer P Type (2″, Boron Doped)