Home » Silicon Nanowire on Silicon Wafer Substrate (Si, >99.9%, Diameter: 40-50nm, Length: 80µm) [Currently Not Available]

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Stock No. CAS MSDS Specification COA
NS6130-12-000158 7440-21-3 Specification pdf COA pdf

Silicon Nanowire on Silicon Wafer Substrate (Si, >99.9%, Diameter: 40-50nm, Length: 80µm) [Currently Not Available]

Silicon Nanowire on Silicon Wafer Substrate (Currently Not Available)

Product: Silicon Nanowire on Silicon Wafer Substrate (Si, >99.9%, Diameter: 40-50nm, Length: 80µm)

Quality Control: Each lot of NANOSHEL Silicon Nanowire on Silicon Wafer Substrate was tested successfully.

SEM - Silicon Nanowire on Silicon Wafer Substrate

SEM - Silicon Nanowire on Silicon Wafer Substrate

 
Product Name Silicon Nanowire on Silicon Wafer Substrate
Stock No NS6130-12-000158
CAS 7440-21-3 Confirm
Purity >99.9% Confirm
Diameter 40-50nm Confirm
Length 80µm Confirm
Molecular Formula Si Confirm
Form Wire Confirm
Color Gray Suspension color Confirm
Concentration 1 - 2 % Confirm
pH 7.9-8.1 Confirm
Coefficient of Variation 51% Confirm
Standard Deviation 10% Confirm
Iso- propanol 0.5% Confirm
Polymer Content < 0.5% Confirm
Solvet Ethanol, Water, Isopropyl Alcohol
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay >99.9%
Other Metal 1000 ppm

Expert Reviews

Jules L. Routbort
Jules L. Routbort, (Argonne National Laboratory, Argonne, USA)

Silicon Nanowire: Nanowires are ultrafine wires or linear arrays of dots, formed by self-assembly. They can be made from wide range of materials. Semiconductor Nanowires made of (silicon, indium phosphide and gallium nitride), insulating Nanowires (sio2,tio2), Molecular Nanowires  either (organic e.g. DNA) or inorganic  Mo6S9−xI), Metallic Nanowires (Ni, Pt, Au) have demonstrated remarkable magnetic, electronic and optical characteristics.


Dr. Ms. Kamiko Chang, Ph.D
Dr. Ms. Kamiko Chang, Ph.D, (University of Science and Technology Beijing, China)

Silicon Nanowire: Nanowires have potential applications in high-density data storage, either as magnetic read heads or as patterned storage media,  and electronic and opto electronic nanodevices, for metallic interconnects of quantum devices and nanodevices.The preparation of these nanowires relies on sophisticated growth techniques, which include self assembly processes, where atoms arrange themselves naturally on stepped surfaces, chemical vapour deposition (CVD) onto patterned substrates, electroplating or molecular beam epitaxy (MBE).


Dr. Nicholaos G. Demas
Dr. Nicholaos G. Demas, (Newcastle University School Of Machanical & Systems Engg. UK)

Silicon Nanowire: One-dimensional structures have been called in different ways: nanowires, nanorod, fibers of fibrils, whiskers, etc. The common characteristic of these structures is that all they have a nanometer size in one of the dimensions, which produces quantum confinement in the material and changes its properties.


Takeo Oku
Takeo Oku, (Department of Materials Science, The University of Shiga Prefecture, Hassaka 2500, Hikone, Shiga 522-8533, Japan)

Silicon Nanowire: Nanowires will be able to greatly reduce the size of electronic devices while allowing to increase the efficiency of those devices. Nanowires can be assembled in a rational and predictable because nanowires chemical composition, length, diameter, doping/electronic properties can be precisely controlled during synthesis.


Dr. Ms. Guixin (Susan), Ph.D
Dr. Ms. Guixin (Susan), Ph.D, (Switzerland-Institute for Inorganic Chemistry, Zurich, Switzerland)

Silicon Nanowire: Nanowires represents the best-defined class of nanoscale building blocks, and this precise control over key variables has correspondingly enabled a wide range of devices and integration strategies to be pursed.


Silicon Nanowire on Silicon Wafer Substrate

Silicon Nanowire on Silicon Wafer Substrate