Home » Terbium doped Yttrium Oxide Sulfide Nanopowder (Y2O2S:Tb, APS: 50-80nm,Purity: 99.9%)

DOPED POWDER

Stock No. CAS MSDS Specification COA
NS6130-12-001221 208778-33-0 Specification pdf COA pdf

Terbium doped Yttrium Oxide Sulfide Nanopowder

Product: Terbium doped Yttrium Oxide Sulfide Nanopowder (Y2O2S:Tb, APS: 50-80nm,Purity: 99.9%)

NS001221

Particles Size Analysis - Y2O2S:Tb Nanopowder

Particles Size Analysis - Y2O2S:Tb Nanopowder

 
Product Terbium doped Yttrium Oxide Sulfide Nanopowder
Stock No NS6130-12-001221
CAS 208778-33-0 Confirm
Purity 99.9% Confirm
APS 50-80nm Confirm
Molecular Formula Y2O2S:Tb Confirm
Form Powder Confirm
Solubility Insoluble in water
Quality Control Each lot of Terbium doped Yttrium Oxide Sulfide Nanopowder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9%
Other Metal 900ppm

Expert Reviews

Dr. Bruce Perrault, Ph.D , (Georgia Institute of Technology (Georgia Tech), USA)

Terbium doped Yttrium Oxide Sulfide: Doping on nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas.The electronic, optical, photochemical, photo-electrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by adding different elements.The materials can be engineered towards specific applications through careful selection of the dopants.


Dr. Myron Rubenstein, Ph.D , (Polytechnic University of Turin, Italy)

Terbium doped Yttrium Oxide Sulfide: Doping is a powerful and effective way to alter the electronic and optical properties of a semiconductor. Doping is essential in the semiconductor industry since most semiconductors including silicon are essentially insulators without doping at room temperature. The addition of dopant can introduce electronic and structural defects into the pristine nanomaterials that can be advantageous or deleterious.


Dr. Huojin Chan , (University of Science and Technology of China, Hefei, Anhui, China)

Terbium doped Yttrium Oxide Sulfide: Doping typically follows a Poisson distribution.The uniform doping is done either by growth or nucleation techniques by decoupling the doping and growth process. In nucleation doping reaction conditions are controlled in such a way along with judicious choice of reactants that a nucleus of dopant can be created and by shell growth of effectively confining the dopant to the center of particle.


Dr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)

Terbium doped Yttrium Oxide Sulfide: Nano-materials have been recently investigated due to their novel properties that are acquired at the nanometer scale, properties which change with size or shape. Besides the elemental composition and physical structure, as in bulk material or traditional chemistry, the size of the material provides another variable for us to tune the property of material. Moreover, a few dopants in the material can make the properties more adjustable.


Dr. Hans Roelofs Ph.D , (National Technical University of Athens, Greece)

Terbium doped Yttrium Oxide Sulfide: Dopant precursor substantially changes the reaction kinetics.Doped semiconductor nanomaterials are expected to play an important role in nanoelectronics and nanophotonic devices. Doping level of nanostructures will effects the properties and functionality of nanoparticles. Doped semiconductor nanomaterials constitute a unique and important class of nanomaterials with novel properties.


Terbium doped Yttrium Oxide Sulfide

Terbium doped Yttrium Oxide Sulfide


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