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Home » Titanium Silicide Powder (TiSi2, Purity: 99.9%)

INORGANIC COMPOUNDS

Stock No. CAS MSDS Specification COA
NS6130-12-000283 12039-83-7 MSDS pdf Specification pdf COA pdf

Titanium Silicide Powder

(TiSi2, Purity: 99.9%)

SEM-Titanium Silicide Powder

SEM-Titanium Silicide Powder

Particles Size of Analysis-Titanium Silicide Powder

Particles Size of Analysis-Titanium Silicide Powder

 
Product Titanium Silicide Powder
Stock No NS6130-12-000283
CAS 12039-83-7 Confirm
Purity 99.9 % Confirm
APS <100 µm Confirm
HS Code 28499090 Confirm
Molecular Formula TiSi2 Confirm
Molecular Weight 104.038 g/mol Confirm
Form Powder Confirm
Color Black Confirm
Density 4.02 g/cm³ Confirm
Melting Point 1470 °C Confirm
Boiling Point 1540 °C Confirm
Vapor Pressure, 20° <0.001mm Confirm
Solubility in Water Insoluble
Solubility Soluble in HF
Quality Control Each lot of Titanium Silicide Powder was tested successfully.
Main Inspect Verifier Manager QC

Typical Chemical Analysis

Assay 99.9 %

Expert Reviews

test1
Dr. Bruce Perrault, Ph.D, (Georgia Institute of Technology (Georgia Tech), USA)

TITANIUM SILICIDE POWDER are used as source, gate and drain contacts and local interconnections in CMOS integrated circuits. In these applications, it is important that the titanium silicide phase have a low resistivity (< 20μΩ-cm) and not agglomerate during high temperature processing. The Ti/Si system has two silicide phases that are useful for electronic applications, high resistivity C49-TiSi2 (60-70 μΩ-cm) which forms at 600 – 700°C and low resistivity (15-20 μΩ-cm) C54-TiSi2 which forms from 700 to 850°C.


Dr. Myron Rubenstein, Ph.D, (Polytechnic University of Turin, Italy)

TITANIUM SILICIDE POWDER on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact between the polysilicon and aluminum wire. The ohmic contact should be better compared to metal-polysilicon borders. This silicide has been widely used to reduce resistance of polysilicon gates.


Dr. Huojin Chan, (University of Science and Technology of China, Hefei, Anhui, China)

TITANIUM SILICIDE POWDER TisSi3 & TiSi2 with complex hexagonal D88 & orthorhombic C54 lattic structure exhibit supericar physical & menchnical properties such as high lattice eneryies & melting temperature, high hardness, elastic stiffness & flow stresses low density & excellent creep & oridection resistance.


Dr. Ms. Yi Yen Shi, (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)

TITANIUM SILICIDE POWDER Formed on monocrystalline silicon sabstartes by repid thermal annealing of Ti layers deposited an Si 700-800° for 240s . Titanium dislicide thin titanium layers deposited by electron gun evaporation. Magneton sputtering over single crystel a ploy cristaline silicon substrate by mainly considering the reaction kinetices of the process.


Dr. Hans Roelofs Ph.D, (National Technical University of Athens, Greece)

TITANIUM SILICIDE POWDER High Melting point Intermetallices bared on titanium silicides are very attrative for application temp. up to 1300°C. The titanium silicides graphit low density high elastic & stiffness, high creep strenght excellent oreidution resistance.Titanium silicides electrical & thermal conductivity & good compatibility to silicon & titanium substance.


Titanium Silicide Powder

Titanium Silicide Powder


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