Home » Titanium Silicide Powder (TiSi2, Purity: 99.9%)
|Product||Titanium Silicide Powder|
|Molecular Weight||104.038 g/mol||Confirm|
|Melting Point||1470 °C||Confirm|
|Boiling Point||1540 °C||Confirm|
|Vapor Pressure, 20°||<0.001mm||Confirm|
|Solubility in Water||Insoluble|
|Solubility||Soluble in HF|
|Quality Control||Each lot of Titanium Silicide Powder was tested successfully.|
|Main Inspect Verifier||Manager QC|
TITANIUM SILICIDE POWDER are used as source, gate and drain contacts and local interconnections in CMOS integrated circuits. In these applications, it is important that the titanium silicide phase have a low resistivity (< 20μΩ-cm) and not agglomerate during high temperature processing. The Ti/Si system has two silicide phases that are useful for electronic applications, high resistivity C49-TiSi2 (60-70 μΩ-cm) which forms at 600 – 700°C and low resistivity (15-20 μΩ-cm) C54-TiSi2 which forms from 700 to 850°C.
TITANIUM SILICIDE POWDER on a Sub-nanometer CMOS devices. On the top of CMOS device gate, metal silicide is developed on-top of the polysilicon to produce an ohmic contact between the polysilicon and aluminum wire. The ohmic contact should be better compared to metal-polysilicon borders. This silicide has been widely used to reduce resistance of polysilicon gates.
TITANIUM SILICIDE POWDER TisSi3 & TiSi2 with complex hexagonal D88 & orthorhombic C54 lattic structure exhibit supericar physical & menchnical properties such as high lattice eneryies & melting temperature, high hardness, elastic stiffness & flow stresses low density & excellent creep & oridection resistance.
TITANIUM SILICIDE POWDER Formed on monocrystalline silicon sabstartes by repid thermal annealing of Ti layers deposited an Si 700-800° for 240s . Titanium dislicide thin titanium layers deposited by electron gun evaporation. Magneton sputtering over single crystel a ploy cristaline silicon substrate by mainly considering the reaction kinetices of the process.
TITANIUM SILICIDE POWDER High Melting point Intermetallices bared on titanium silicides are very attrative for application temp. up to 1300°C. The titanium silicides graphit low density high elastic & stiffness, high creep strenght excellent oreidution resistance.Titanium silicides electrical & thermal conductivity & good compatibility to silicon & titanium substance.
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