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Doped Semiconductor

Stock No.
MSDS pdf

Yttrium Aluminium Neodymium Doped

(Y2.97Nd0.03Al5O12, Purity: 99%, >300nm)
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Yttrium Aluminium Neodymium Doped
ProductYttrium Aluminium Neodymium doped
Stock NoNS6130-10-1099
HS Code9001900045Confirm
Molecular FormulaY2.97Nd0.03Al5O12Confirm
Molecular Weight 596.7g/molConfirm
Density 4.55 g/cm³Confirm
Melting Point1970 °CConfirm
Crystal StructureCubicConfirm
Weight of Nd0.725%Confirm
Atoms of Nd per unit volume1.38×1020 /cm³Confirm
Emission wavelength1064 nmConfirm
Transition4F3/2 → 4I11/2Confirm
Duration of fluorescence230 μsConfirm
Thermal Conductivity0.14 W•cm−1•K−1Confirm
Specific heat capacity0.59 J•g−1•K−1Confirm
Thermal expansion6.9×10−6 K−1Confirm
dn/dT7.3×10−6 K−1Confirm
Young's modulus3.17×104 K•g/mm−2Confirm
Resistance to thermal shock790 W•m−1Confirm
Quality ControlEach Lot of Yttrium Aluminium Neodymium doped was tested successfully
Main Inspect VerifierManager QC

Typical Chemical Analysis


Expert Reviews

Dr. Hans Roelofs Ph.D (National Technical University of Athens, Greece)

Yttrium Aluminium Neodymium doped: Doping on nanomaterials provides a flexible way to tune to the properties of the materials while maintaining their high surface areas. The electronic, optical, photochemical, photo-electrochemical, photocatalytic and photoexcited relaxation properties can be tuned towards the desired direction by adding different elements. The materials can be engineered towards specific applications through careful selection of the dopants.

Dr. Ms. Yi Yen Shi (King Mongkut’s University of Technology Thonburi,Bangkok, Thailand)

Yttrium Aluminium Neodymium doped: Doping is a powerful and effective way to alter the electronic and optical properties of a semiconductor. Doping is essential in the semiconductor industry since most semiconductors including silicon are essentially insulators without doping at room temperature. The addition of dopant can introduce electronic and structural defects into the pristine nanomaterials that can be advantageous or deleterious.

Dr. Huojin Chan (University of Science and Technology of China, Hefei, Anhui, China)

Yttrium Aluminium Neodymium doped: Doping typically follows a Poisson distribution. The uniform doping is done either by growth or nucleation techniques by decoupling the doping and growth process. In nucleation doping reaction conditions are controlled in such a way along with judicious choice of reactants that a nucleus of dopant can be created and by shell growth of effectively confining the dopant to the center of particle.

Dr. Bruce Perrault, Ph.D (Georgia Institute of Technology (Georgia Tech), USA)

Yttrium Aluminium Neodymium doped: Nano-materials have been recently investigated due to their novel properties that are acquired at the nanometer scale, properties which change with size or shape. Besides the elemental composition and physical structure, as in bulk material or traditional chemistry, the size of the material provides another variable for us to tune the property of material. Moreover, a few dopants in the material can make the properties more adjustable.

Dr. Myron Rubenstein, Ph.D (Polytechnic University of Turin, Italy)

Yttrium Aluminium Neodymium doped: Dopant precursor substantially changes the reaction kinetics. Doped semiconductor nanomaterials are expected to play an important role in nanoelectronics and nanophotonic devices. Doping level of nanostructures will effects the properties and functionality of nanoparticles. Doped semiconductor nanomaterials constitute a unique and important class of nanomaterials with novel properties.


Yttrium Aluminium Neodymium doped

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